Samsung M3 78T3354BZ0-CCC 256MB vs Kingston 9905625-142.A00G 16GB

总分

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分

Kingston 9905625-142.A00G 16GB

Kingston 9905625-142.A00G 16GB

差异规格评论

差异

Samsung M3 78T3354BZ0-CCC 256MB

需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB

报告一个错误

更快的读取速度，GB/s

2 13.8

测试中的平均数值

Kingston 9905625-142.A00G 16GB

需要考虑的原因
Kingston 9905625-142.A00G 16GB

报告一个错误

低于PassMark测试中的延时，ns

29 46

左右 -59% 更低的延时
更快的写入速度，GB/s

10.7 1,519.2

测试中的平均数值
更高的内存带宽，mbps

19200 3200

左右 6 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T3354BZ0-CCC 256MB

Kingston 9905625-142.A00G 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 29
读取速度，GB/s

2,909.8 13.8
写入速度，GB/s

1,519.2 10.7
内存带宽，mbps

3200 19200

Other

描述

PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

3-3-3-12 / 400 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

241 2737

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

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Team Group Inc. TEAMGROUP-UD4-3000 8GB

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AMD R538G1601U2S 8GB

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Corsair CMK32GX4M4A2133C15 8GB

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Samsung DDR3 8GB 1600MHz 8GB

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Micron Technology 8ATF1G64HZ-2G2G1 8GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

SK Hynix HMA451U7MFR8N-TF 4GB

SK Hynix HMA451U7MFR8N-TF 4GB

Micron Technology MTA8ATF1G64HZ-2G3A1 8GB

Micron Technology MTA8ATF1G64HZ-2G3A1 8GB

A-DATA Technology DDR3 1866 8GB

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Kingston 99U5584-004.A00LF 4GB

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Kingston 9965596-019.B01G 4GB

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AMD AE34G1601U1 4GB

Micron Technology TEAMGROUP-UD4-3000 16GB

Micron Technology TEAMGROUP-UD4-3000 16GB