Samsung M3 78T3354BZ0-CCC 256MB vs Kingston 9905678-173.A00G 8GB

总分

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分

Kingston 9905678-173.A00G 8GB

Kingston 9905678-173.A00G 8GB

差异规格评论

差异

Samsung M3 78T3354BZ0-CCC 256MB

需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB

报告一个错误

更快的读取速度，GB/s

2 10.4

测试中的平均数值

Kingston 9905678-173.A00G 8GB

需要考虑的原因
Kingston 9905678-173.A00G 8GB

报告一个错误

低于PassMark测试中的延时，ns

38 46

左右 -21% 更低的延时
更快的写入速度，GB/s

4.7 1,519.2

测试中的平均数值
更高的内存带宽，mbps

19200 3200

左右 6 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T3354BZ0-CCC 256MB

Kingston 9905678-173.A00G 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 38
读取速度，GB/s

2,909.8 10.4
写入速度，GB/s

1,519.2 4.7
内存带宽，mbps

3200 19200

Other

描述

PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

3-3-3-12 / 400 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

241 1672

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Team Group Inc. UD5-6400 16GB

Team Group Inc. UD5-6400 16GB

Corsair CMW8GX4M1Z3600C18 8GB

Corsair CMW8GX4M1Z3600C18 8GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

G Skill Intl F4-2133C15-4GVK 4GB

G Skill Intl F4-2133C15-4GVK 4GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

Kingston 9905678-173.A00G 8GB

Kingston 9905678-173.A00G 8GB

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

Corsair CMK64GX4M82800C14 8GB

Corsair CMK64GX4M82800C14 8GB

Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

Kingston 9905734-061.A00G 32GB

Kingston 9905734-061.A00G 32GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Apacer Technology 78.C2GFK.AR20B 8GB

Apacer Technology 78.C2GFK.AR20B 8GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Micron Technology 4ATF51264HZ-2G3E1 4GB

Micron Technology 4ATF51264HZ-2G3E1 4GB

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

Kingston KHX3600C18D4/16GX 16GB

Kingston KHX3600C18D4/16GX 16GB

Kingston 9905403-090.A01LF 4GB

Kingston 9905403-090.A01LF 4GB

Patriot Memory (PDP Systems) PSD44G240082 4GB

Patriot Memory (PDP Systems) PSD44G240082 4GB

Elpida EBJ21UE8BDF0-DJ-F 2GB

Elpida EBJ21UE8BDF0-DJ-F 2GB

Crucial Technology CT8G4DFS8213.C8FDR1 8GB

Crucial Technology CT8G4DFS8213.C8FDR1 8GB

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

Team Group Inc. DDR4 2666 8GB

Team Group Inc. DDR4 2666 8GB

PNY Electronics PNY 2GB

PNY Electronics PNY 2GB

Samsung M471A1G43EB1-CRC 8GB

Samsung M471A1G43EB1-CRC 8GB

Team Group Inc. Team-Elite-1333 4GB

Team Group Inc. Team-Elite-1333 4GB

Crucial Technology BLS4G4D26BFSB.8FBR2 4GB

Crucial Technology BLS4G4D26BFSB.8FBR2 4GB

Kingston 99U5428-040.A00LF 4GB

Kingston 99U5428-040.A00LF 4GB

G Skill Intl F4-2400C17-8GISM 8GB

G Skill Intl F4-2400C17-8GISM 8GB