Samsung M3 78T3354BZ0-CCC 256MB vs Maxsun MSD416G26Q3 16GB

总分

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

总分

Maxsun MSD416G26Q3 16GB

Maxsun MSD416G26Q3 16GB

差异规格评论

差异

Samsung M3 78T3354BZ0-CCC 256MB

需要考虑的原因
Samsung M3 78T3354BZ0-CCC 256MB

报告一个错误

低于PassMark测试中的延时，ns

46 84

左右 45% 更低的延时
更快的读取速度，GB/s

2 12.5

测试中的平均数值

Maxsun MSD416G26Q3 16GB

需要考虑的原因
Maxsun MSD416G26Q3 16GB

报告一个错误

更快的写入速度，GB/s

7.0 1,519.2

测试中的平均数值
更高的内存带宽，mbps

21300 3200

左右 6.66 更高的带宽

规格

完整的技术规格清单

Samsung M3 78T3354BZ0-CCC 256MB

Maxsun MSD416G26Q3 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

46 84
读取速度，GB/s

2,909.8 12.5
写入速度，GB/s

1,519.2 7.0
内存带宽，mbps

3200 21300

Other

描述

PC2-3200, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

3-3-3-12 / 400 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

241 1486

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Elpida EBJ81UG8BBU0-GN-F 8GB

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G Skill Intl F4-2800C17-8GIS 8GB

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SK Hynix HYMP112U64CP8-S5 1GB

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Crucial Technology BLS16G4D32AEST.M16FE 16GB

Crucial Technology BLS16G4D32AEST.M16FE 16GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Mushkin MRX4U300GJJM16G 16GB

Mushkin MRX4U300GJJM16G 16GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Good Wealth Technology Ltd. KETECH 8GB

Good Wealth Technology Ltd. KETECH 8GB

Samsung M471B5273CH0-CH9 4GB

Samsung M471B5273CH0-CH9 4GB

G Skill Intl F4-2400C15-16GFT 16GB

G Skill Intl F4-2400C15-16GFT 16GB

Swissbit MEU25664D6BC2EP-30 2GB

Swissbit MEU25664D6BC2EP-30 2GB

V-Color Technology Inc. TL48G30S8KSRGB15 8GB

V-Color Technology Inc. TL48G30S8KSRGB15 8GB

SK Hynix HMT325S6CFR8C-H9 2GB

SK Hynix HMT325S6CFR8C-H9 2GB

G Skill Intl F4-2400C15-8GVB 8GB

G Skill Intl F4-2400C15-8GVB 8GB