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Samsung M3 78T5663EH3-CF7 2GB
Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB

Samsung M3 78T5663EH3-CF7 2GB vs Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB

总分
star star star star star
Samsung M3 78T5663EH3-CF7 2GB

Samsung M3 78T5663EH3-CF7 2GB

总分
star star star star star
Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB

Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB

差异 规格 评论

差异

Samsung M3 78T5663EH3-CF7 2GB 需要考虑的原因
Samsung M3 78T5663EH3-CF7 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 18.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,451.8 left arrow 14.8
    测试中的平均数值
Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB 需要考虑的原因
Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 65
    左右 -132% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 6400
    左右 2.66 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T5663EH3-CF7 2GB
Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    65 left arrow 28
  • 读取速度，GB/s
    4,605.9 left arrow 18.1
  • 写入速度，GB/s
    2,451.8 left arrow 14.8
  • 内存带宽，mbps
    6400 left arrow 17000
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-17000, 1.2V, CAS Supported: 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    878 left arrow 3564

Samsung M3 78T5663EH3-CF7 2GB RAM的比较

Samsung M3 78T5663FB3-CF7 2GB
Samsung M378T5663DZ3-CF7 2GB

Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB RAM的比较

G Skill Intl F3-10600CL9-2GBNT 2GB
Nanya Technology M2X4G64CB8HG5N-DG 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M3 78T5663EH3-CF7 2GB
Samsung M3 78T5663EH3-CF7 2GB
Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB
Chun Well Technology Holding Limited CL16-18-18 D4-3200
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Corsair CMD32GX4M2B3000C15 16GB
内存RAM
A-DATA Technology AM2U16BC4P2-B05B 4GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
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Thermaltake Technology Co Ltd R009D408GX2-3600C18B 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
DSL Memory CIR-W4SUSS2408G 8GB
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Corsair CML8GX3M2A1866C9 4GB
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Memphis Electronic D4SO1G724GI-A58SD 8GB
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Kingston 9905458-017.A01LF 4GB
Kingston 9905458-017.A01LF 4GB
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Corsair CM4X4GF2400Z16K4 4GB
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G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
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Avant Technology W6451U48J7240N6 4GB
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TwinMOS 8DHE3MN8-HATP 2GB
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Kingston 9965596-019.B01G 4GB
内存RAM
G Skill Intl F3-2133C9-4GAB 4GB
G Skill Intl F3-2133C9-4GAB 4GB
Apacer Technology D12.2326WH.001 16GB
Apacer Technology D12.2326WH.001 16GB
内存RAM
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Samsung M471A5244CB0-CWE 4GB
Crucial Technology CT8G4SFS824A.M8FD 8GB
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内存RAM
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Mushkin 991988 (996988) 4GB
Apacer Technology 78.CAGPP.ARC0B 8GB
Apacer Technology 78.CAGPP.ARC0B 8GB
内存RAM
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Samsung DDR3 8GB 1600MHz 8GB
Corsair CMK16GX4M2K4133C19 8GB
Corsair CMK16GX4M2K4133C19 8GB
内存RAM
Kingston 9905584-016.A00LF 4GB
Kingston 9905584-016.A00LF 4GB
Crucial Technology CT8G4SFD824A.M16FE1 8GB
Crucial Technology CT8G4SFD824A.M16FE1 8GB
内存RAM
Corsair CMD8GX3M2A2933C12 4GB
Corsair CMD8GX3M2A2933C12 4GB
Kingston 9905663-016.A00G 16GB
Kingston 9905663-016.A00G 16GB
内存RAM