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Samsung M3 78T5663RZ3-CE6 2GB
Apacer Technology 78.C1GMM.DFW0C 8GB

Samsung M3 78T5663RZ3-CE6 2GB vs Apacer Technology 78.C1GMM.DFW0C 8GB

总分
star star star star star
Samsung M3 78T5663RZ3-CE6 2GB

Samsung M3 78T5663RZ3-CE6 2GB

总分
star star star star star
Apacer Technology 78.C1GMM.DFW0C 8GB

Apacer Technology 78.C1GMM.DFW0C 8GB

差异 规格 评论

差异

Samsung M3 78T5663RZ3-CE6 2GB 需要考虑的原因
Samsung M3 78T5663RZ3-CE6 2GB
报告一个错误
  • 更快的读取速度，GB/s
    4 left arrow 12.3
    测试中的平均数值
Apacer Technology 78.C1GMM.DFW0C 8GB 需要考虑的原因
Apacer Technology 78.C1GMM.DFW0C 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 60
    左右 -150% 更低的延时
  • 更快的写入速度，GB/s
    6.2 left arrow 2,168.2
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 5300
    左右 3.62 更高的带宽

规格

完整的技术规格清单
Samsung M3 78T5663RZ3-CE6 2GB
Apacer Technology 78.C1GMM.DFW0C 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    60 left arrow 24
  • 读取速度，GB/s
    4,595.2 left arrow 12.3
  • 写入速度，GB/s
    2,168.2 left arrow 6.2
  • 内存带宽，mbps
    5300 left arrow 19200
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    941 left arrow 1941

Samsung M3 78T5663RZ3-CE6 2GB RAM的比较

Samsung M3 78T5663DZ3-CE6 2GB
Kingston 9965640-016.A00G 32GB

Apacer Technology 78.C1GMM.DFW0C 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
A-DATA Technology AM2U16BC4P2-B05B 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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Nanya Technology NT4GC64B8HG0NS-CG 4GB
Apacer Technology 78.B1GQB.4010B 4GB
Apacer Technology 78.B1GQB.4010B 4GB
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Corsair CMK32GX4M2D3200C16 16GB
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A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
GIGA - BYTE Technology Co Ltd GP-ARS16G32 8GB
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内存RAM
Nanya Technology NT512T64U88B0BY-3C 512MB
Nanya Technology NT512T64U88B0BY-3C 512MB
Kingston 9965589-033.D00G 8GB
Kingston 9965589-033.D00G 8GB
内存RAM
SK Hynix DDR2 800 2G 2GB
SK Hynix DDR2 800 2G 2GB
Corsair CMD16GX4M2B3200C16 8GB
Corsair CMD16GX4M2B3200C16 8GB
内存RAM
Nanya Technology M2Y1G64TU8HB0B-25C 1GB
Nanya Technology M2Y1G64TU8HB0B-25C 1GB
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内存RAM
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Samsung M378B5673EH1-CF8 2GB
Wilk Elektronik S.A. IRX3200D464L16/16G 16GB
Wilk Elektronik S.A. IRX3200D464L16/16G 16GB
内存RAM
Samsung M3 78T5663EH3-CF7 2GB
Samsung M3 78T5663EH3-CF7 2GB
G Skill Intl F4-4133C19-8GTZC 8GB
G Skill Intl F4-4133C19-8GTZC 8GB
内存RAM
Samsung M471B1G73QH0-YK0 8GB
Samsung M471B1G73QH0-YK0 8GB
Corsair CMW256GX4M8E3200C16 32GB
Corsair CMW256GX4M8E3200C16 32GB
内存RAM
A-DATA Technology DQKD1A08 1GB
A-DATA Technology DQKD1A08 1GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston HP32D4U8D8HC-16XR 16GB
Kingston HP32D4U8D8HC-16XR 16GB
内存RAM
AMD R538G1601U2S-UO 8GB
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Gloway International (HK) STKD4XMP2400-F 4GB
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Kllisre 8GB
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Netac Technology Co Ltd E40832A 8GB
内存RAM
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G Skill Intl F3-1333C9-4GIS 4GB
G Skill Intl F4-2133C15-8GSQ 8GB
G Skill Intl F4-2133C15-8GSQ 8GB
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