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Samsung M3 78T5663RZ3-CE6 2GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB
比较
Samsung M3 78T5663RZ3-CE6 2GB vs Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB
总分
Samsung M3 78T5663RZ3-CE6 2GB
总分
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB
差异
规格
评论
差异
需要考虑的原因
Samsung M3 78T5663RZ3-CE6 2GB
报告一个错误
更快的读取速度,GB/s
4
14.2
测试中的平均数值
需要考虑的原因
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB
报告一个错误
低于PassMark测试中的延时,ns
25
60
左右 -140% 更低的延时
更快的写入速度,GB/s
7.4
2,168.2
测试中的平均数值
更高的内存带宽,mbps
19200
5300
左右 3.62 更高的带宽
规格
完整的技术规格清单
Samsung M3 78T5663RZ3-CE6 2GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
60
25
读取速度,GB/s
4,595.2
14.2
写入速度,GB/s
2,168.2
7.4
内存带宽,mbps
5300
19200
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
941
2104
Samsung M3 78T5663RZ3-CE6 2GB RAM的比较
Samsung M3 78T5663DZ3-CE6 2GB
Kingston 9965640-016.A00G 32GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2400AH 8GB RAM的比较
Samsung M393B1K70QB0-CK0 8GB
Kingston 9905471-002.A00LF 2GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMK128GX4M4D3600C18 32GB
Kingston 9905584-016.A00LF 4GB
G Skill Intl F4-2400C15-16GIS 16GB
Samsung M393B2G70BH0-CK0 16GB
Kingston KHX2666C16S4/32G 32GB
Samsung M3 78T5663RZ3-CE6 2GB
Hynix Semiconductor (Hyundai Electronics) GKE800SO51208
Kingston 9965525-140.A00LF 8GB
Micron Technology 16ATF1G64HZ-2G1A2 8GB
Corsair CM2X1024-8500C5D 1GB
Crucial Technology CT16G4DFD8266.C16FN 16GB
A-DATA Technology AM2L16BC4R1-B0AS 4GB
G Skill Intl F4-2666C15-8GRKB 8GB
SK Hynix HMA82GS7AFR8N-UH 16GB
SK Hynix HMA81GS6JJR8N-VK 8GB
Samsung M3 78T5663RZ3-CE6 2GB
Smart Modular SF4641G8CKHI6DFSDS 8GB
Kingston 99U5403-036.A00G 4GB
SK Hynix HMA81GS6CJRJR-VK 8GB
Samsung DDR3 8GB 1600MHz 8GB
Corsair CMD64GX4M4A2666C15 16GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
G Skill Intl F4-3200C16-4GTZB 4GB
Crucial Technology CT102464BA160B.M16 8GB
G Skill Intl F4-3200C16-16GVK 16GB
Micron Technology 18HTF12872AY-800F1 1GB
G Skill Intl F4-4400C19-8GTZKK 8GB
报告一个错误
×
Bug description
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