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Samsung M3 93T5750CZA-CE6 2GB
A-DATA Technology AO1P24HC4R1-BUYS 4GB

Samsung M3 93T5750CZA-CE6 2GB vs A-DATA Technology AO1P24HC4R1-BUYS 4GB

总分
star star star star star
Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分
star star star star star
A-DATA Technology AO1P24HC4R1-BUYS 4GB

A-DATA Technology AO1P24HC4R1-BUYS 4GB

差异 规格 评论

差异

Samsung M3 93T5750CZA-CE6 2GB 需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 15.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,622.0 left arrow 11.8
    测试中的平均数值
A-DATA Technology AO1P24HC4R1-BUYS 4GB 需要考虑的原因
A-DATA Technology AO1P24HC4R1-BUYS 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 77
    左右 -221% 更低的延时
  • 更高的内存带宽，mbps
    19200 left arrow 5300
    左右 3.62 更高的带宽

规格

完整的技术规格清单
Samsung M3 93T5750CZA-CE6 2GB
A-DATA Technology AO1P24HC4R1-BUYS 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    77 left arrow 24
  • 读取速度，GB/s
    3,405.2 left arrow 15.1
  • 写入速度，GB/s
    2,622.0 left arrow 11.8
  • 内存带宽，mbps
    5300 left arrow 19200
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    763 left arrow 2332

Samsung M3 93T5750CZA-CE6 2GB RAM的比较

takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB

A-DATA Technology AO1P24HC4R1-BUYS 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Crucial Technology BL16G32C16U4B.16FE 16GB
Crucial Technology BL16G32C16U4B.16FE 16GB
Corsair CMD32GX4M2C3466C16W 16GB
Corsair CMD32GX4M2C3466C16W 16GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMT32GX4M4C3000C15 8GB
Corsair CMT32GX4M4C3000C15 8GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
A-DATA Technology AO1P24HC4R1-BUYS 4GB
A-DATA Technology AO1P24HC4R1-BUYS 4GB
内存RAM
Kingston 99U5429-014.A00LF 4GB
Kingston 99U5429-014.A00LF 4GB
Crucial Technology BLS4G4D240FSB.8FARG 4GB
Crucial Technology BLS4G4D240FSB.8FARG 4GB
内存RAM
Patriot Memory (PDP Systems) PSD22G8002 2GB
Patriot Memory (PDP Systems) PSD22G8002 2GB
Kingston 99U5678-029.A00G 8GB
Kingston 99U5678-029.A00G 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Team Group Inc. TEAMGROUP-UD4-4500 8GB
Team Group Inc. TEAMGROUP-UD4-4500 8GB
内存RAM
Corsair CMSX32GX4M2A3200C22 16GB
Corsair CMSX32GX4M2A3200C22 16GB
Crucial Technology CT8G4SFRA266.M8FJ 8GB
Crucial Technology CT8G4SFRA266.M8FJ 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology CT16G4SFD8266.M16FRS 16GB
Crucial Technology CT16G4SFD8266.M16FRS 16GB
内存RAM
PNY Electronics PNY 2GB
PNY Electronics PNY 2GB
Kingston KF3200C16D4/16GX 16GB
Kingston KF3200C16D4/16GX 16GB
内存RAM
Samsung M393B2G70BH0-YK0 16GB
Samsung M393B2G70BH0-YK0 16GB
Micron Technology 8ATF1G64HZ-2G3H1 8GB
Micron Technology 8ATF1G64HZ-2G3H1 8GB
内存RAM
Samsung M393B2G70BH0-CK0 16GB
Samsung M393B2G70BH0-CK0 16GB
Corsair CMU32GX4M2D3200C16 16GB
Corsair CMU32GX4M2D3200C16 16GB
内存RAM
Kingston 9905471-002.A00LF 2GB
Kingston 9905471-002.A00LF 2GB
Kingston XW21KG-MIE-NX 8GB
Kingston XW21KG-MIE-NX 8GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Avant Technology J642GU42J9266N4 16GB
Avant Technology J642GU42J9266N4 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Chun Well Technology Holding Limited CL22-22-22 D4-3200 16GB
Chun Well Technology Holding Limited CL22-22-22 D4-3200
内存RAM