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Samsung M3 93T5750CZA-CE6 2GB
Apacer Technology 78.C1GS7.AUC0B 8GB

Samsung M3 93T5750CZA-CE6 2GB vs Apacer Technology 78.C1GS7.AUC0B 8GB

总分
star star star star star
Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分
star star star star star
Apacer Technology 78.C1GS7.AUC0B 8GB

Apacer Technology 78.C1GS7.AUC0B 8GB

差异 规格 评论

差异

Samsung M3 93T5750CZA-CE6 2GB 需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 18.4
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,622.0 left arrow 14.4
    测试中的平均数值
Apacer Technology 78.C1GS7.AUC0B 8GB 需要考虑的原因
Apacer Technology 78.C1GS7.AUC0B 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    21 left arrow 77
    左右 -267% 更低的延时
  • 更高的内存带宽，mbps
    21300 left arrow 5300
    左右 4.02 更高的带宽

规格

完整的技术规格清单
Samsung M3 93T5750CZA-CE6 2GB
Apacer Technology 78.C1GS7.AUC0B 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    77 left arrow 21
  • 读取速度，GB/s
    3,405.2 left arrow 18.4
  • 写入速度，GB/s
    2,622.0 left arrow 14.4
  • 内存带宽，mbps
    5300 left arrow 21300
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
  • 排名PassMark (越多越好)
    763 left arrow 3305

Samsung M3 93T5750CZA-CE6 2GB RAM的比较

takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB

Apacer Technology 78.C1GS7.AUC0B 8GB RAM的比较

Crucial Technology BLT16G4D30AETA.K16FB 16GB
Apacer Technology AQD-D4U8GN24-SE 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Apacer Technology 78.C1GS7.AUC0B 8GB
Apacer Technology 78.C1GS7.AUC0B 8GB
内存RAM
Kingston HP16D3LS1KBGH/4G 4GB
Kingston HP16D3LS1KBGH/4G 4GB
Crucial Technology CT4G4DFS8266.C8FF 4GB
Crucial Technology CT4G4DFS8266.C8FF 4GB
内存RAM
Ramaxel Technology RMT3020EC58E9F1333 4GB
Ramaxel Technology RMT3020EC58E9F1333 4GB
G Skill Intl F4-2400C17-8GSXW 8GB
G Skill Intl F4-2400C17-8GSXW 8GB
内存RAM
Kingston KHX1866C10D3/8GX 8GB
Kingston KHX1866C10D3/8GX 8GB
Hewlett-Packard 7EH64AA#ABC 8GB
Hewlett-Packard 7EH64AA#ABC 8GB
内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Corsair CMK64GX4M4C3200C16 16GB
Corsair CMK64GX4M4C3200C16 16GB
内存RAM
Samsung M4 70T2953EZ3-CE6 1GB
Samsung M4 70T2953EZ3-CE6 1GB
G Skill Intl F4-3200C15-8GTZSW 8GB
G Skill Intl F4-3200C15-8GTZSW 8GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
Micron Technology 18ADF2G72AZ-2G6E1 16GB
Micron Technology 18ADF2G72AZ-2G6E1 16GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Kingston KHX2133C14S4/16G 16GB
Kingston KHX2133C14S4/16G 16GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Chun Well Technology Holding Limited D4U1636144B 16GB
Chun Well Technology Holding Limited D4U1636144B 16GB
内存RAM
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
Unifosa Corporation GU332G0ALEPR8H2C6F 2GB
G Skill Intl F4-3466C16-4GTZ 4GB
G Skill Intl F4-3466C16-4GTZ 4GB
内存RAM
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMY8GX3M2A2666C10 4GB
Crucial Technology CT8G4DFD8213.C16FAD1 8GB
Crucial Technology CT8G4DFD8213.C16FAD1 8GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Corsair CMK32GX4M1D3000C16 32GB
Corsair CMK32GX4M1D3000C16 32GB
内存RAM
Kingston K1N7HK-ELC 2GB
Kingston K1N7HK-ELC 2GB
Corsair CMD32GX4M2A2666C15 16GB
Corsair CMD32GX4M2A2666C15 16GB
内存RAM
Crucial Technology CT25664AA800.M16FG 2GB
Crucial Technology CT25664AA800.M16FG 2GB
G Skill Intl F4-4000C18-8GTRG 8GB
G Skill Intl F4-4000C18-8GTRG 8GB
内存RAM