Samsung M3 93T5750CZA-CE6 2GB vs Chun Well Technology Holding Limited CL16-20-20 D4-3200 32GB

总分

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分

Chun Well Technology Holding Limited CL16-20-20 D4-3200 32GB

Chun Well Technology Holding Limited CL16-20-20 D4-3200 32GB

差异规格评论

差异

Samsung M3 93T5750CZA-CE6 2GB

需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 17.6

测试中的平均数值
更快的写入速度，GB/s

2,622.0 13.9

测试中的平均数值

Chun Well Technology Holding Limited CL16-20-20 D4-3200 32GB

需要考虑的原因
Chun Well Technology Holding Limited CL16-20-20 D4-3200 32GB

报告一个错误

低于PassMark测试中的延时，ns

30 77

左右 -157% 更低的延时
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Samsung M3 93T5750CZA-CE6 2GB

Chun Well Technology Holding Limited CL16-20-20 D4-3200 32GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 30
读取速度，GB/s

3,405.2 17.6
写入速度，GB/s

2,622.0 13.9
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

763 3473

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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SanMax Technologies Inc. SMD4-E16G48ME-26V 16GB

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Kingston 99U5713-002.A00G 4GB

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A-DATA Technology VDQVE1B16 2GB

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Ramaxel Technology RMSA3320KE78HAF-3200 8GB

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EXCELERAM D4168G8HHSS9CJRB21 16GB

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Crucial Technology CT51264AC800.C16FC 4GB

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Asgard VMA44UG-MEC1U2AW1 8GB

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Kingston KVR800D2N6/2G 2GB

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Corsair CMD16GX4M2B3733C17 8GB

Corsair CMD16GX4M2B3733C17 8GB

Kingston 99U5474-023.A00LF 4GB

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G Skill Intl F4-2133C15-8GNT 8GB

G Skill Intl F4-2133C15-8GNT 8GB

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

G Skill Intl F4-3200C16-16GSXFB 16GB

G Skill Intl F4-3200C16-16GSXFB 16GB

Avant Technology F6451U64F9333G 4GB

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SanMax Technologies Inc. SMD4-U4G28HA-21P 4GB

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