Samsung M3 93T5750CZA-CE6 2GB vs Corsair CMD16GX4M2B3600C18 8GB

总分

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分

Corsair CMD16GX4M2B3600C18 8GB

Corsair CMD16GX4M2B3600C18 8GB

差异规格评论

差异

Samsung M3 93T5750CZA-CE6 2GB

需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 20.9

测试中的平均数值
更快的写入速度，GB/s

2,622.0 16.6

测试中的平均数值

Corsair CMD16GX4M2B3600C18 8GB

需要考虑的原因
Corsair CMD16GX4M2B3600C18 8GB

报告一个错误

低于PassMark测试中的延时，ns

18 77

左右 -328% 更低的延时
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Samsung M3 93T5750CZA-CE6 2GB

Corsair CMD16GX4M2B3600C18 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 18
读取速度，GB/s

3,405.2 20.9
写入速度，GB/s

2,622.0 16.6
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

763 3601

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-2133C15-8GNS 8GB

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Samsung M3 93T5750CZA-CE6 2GB

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Corsair CMD16GX4M2B3600C18 8GB

Corsair CMD16GX4M2B3600C18 8GB

Samsung M378B5273CH0-CH9 4GB

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Samsung M3 78T2863EHS-CF7 1GB

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Kingston KVR533D2N4 512MB

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Crucial Technology BLT8G4D30BET4K.C8FD 8GB

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G Skill Intl F5-6400J3239G16G 16GB

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Kingston 9905403-515.A00LF 8GB

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Kingston 9905700-026.A00G 8GB

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Ramaxel Technology RMSA3260NA78HAF-2666 8GB

Crucial Technology CT8G4SFRA266.C8FE 8GB

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Kingston 9905403-515.A00LF 8GB

Kingston 9905403-515.A00LF 8GB

Patriot Memory (PDP Systems) 3200 C16 Series 8GB

Patriot Memory (PDP Systems) 3200 C16 Series 8GB