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Samsung M3 93T5750CZA-CE6 2GB
Corsair CMK8GX4M2B4000C19 4GB

Samsung M3 93T5750CZA-CE6 2GB vs Corsair CMK8GX4M2B4000C19 4GB

总分
star star star star star
Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分
star star star star star
Corsair CMK8GX4M2B4000C19 4GB

Corsair CMK8GX4M2B4000C19 4GB

差异 规格 评论

差异

Samsung M3 93T5750CZA-CE6 2GB 需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 18.1
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,622.0 left arrow 13.4
    测试中的平均数值
Corsair CMK8GX4M2B4000C19 4GB 需要考虑的原因
Corsair CMK8GX4M2B4000C19 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    21 left arrow 77
    左右 -267% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 5300
    左右 3.21 更高的带宽

规格

完整的技术规格清单
Samsung M3 93T5750CZA-CE6 2GB
Corsair CMK8GX4M2B4000C19 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    77 left arrow 21
  • 读取速度，GB/s
    3,405.2 left arrow 18.1
  • 写入速度，GB/s
    2,622.0 left arrow 13.4
  • 内存带宽，mbps
    5300 left arrow 17000
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    763 left arrow 3033

Samsung M3 93T5750CZA-CE6 2GB RAM的比较

takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB

Corsair CMK8GX4M2B4000C19 4GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Corsair CMZ16GX3M2A2400C10 8GB
Corsair CMZ16GX3M2A2400C10 8GB
A-DATA Technology AO2P24HCST2-BTCS 16GB
A-DATA Technology AO2P24HCST2-BTCS 16GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Corsair CMK8GX4M2B4000C19 4GB
Corsair CMK8GX4M2B4000C19 4GB
内存RAM
Crucial Technology CT51264AC800.C16FC 4GB
Crucial Technology CT51264AC800.C16FC 4GB
Kingston KHX3600C17D4/16GX 16GB
Kingston KHX3600C17D4/16GX 16GB
内存RAM
Elpida EBJ21UE8BDF0-DJ-F 2GB
Elpida EBJ21UE8BDF0-DJ-F 2GB
Crucial Technology CT16G4SFDFD4A.M16FH 16GB
Crucial Technology CT16G4SFDFD4A.M16FH 16GB
内存RAM
Samsung M471B1G73DB0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
Apacer Technology 78.BAGM6.40C0B 4GB
Apacer Technology 78.BAGM6.40C0B 4GB
内存RAM
Micron Technology 16JSF25664HZ-1G1F1 2GB
Micron Technology 16JSF25664HZ-1G1F1 2GB
Golden Empire CL17-17-17 D4-2400 16GB
Golden Empire CL17-17-17 D4-2400 16GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Kingston KHX3200C16D4/8GX 8GB
Kingston KHX3200C16D4/8GX 8GB
内存RAM
Kingston K531R8-MIN 4GB
Kingston K531R8-MIN 4GB
Kingston 99U5734-036.A00G 16GB
Kingston 99U5734-036.A00G 16GB
内存RAM
G Skill Intl F3-17000CL11-4GBXL 4GB
G Skill Intl F3-17000CL11-4GBXL 4GB
Team Group Inc. TEAMGROUP-SD4-3200 16GB
Team Group Inc. TEAMGROUP-SD4-3200 16GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Neo Forza NMUD480E82-2666 8GB
Neo Forza NMUD480E82-2666 8GB
内存RAM
Samsung M471B1G73DB0-YK0 8GB
Samsung M471B1G73DB0-YK0 8GB
Super Talent F21UB8GS 8GB
Super Talent F21UB8GS 8GB
内存RAM
Samsung M378B5173BH0-CH9 4GB
Samsung M378B5173BH0-CH9 4GB
Micron Technology 8ATF1G64AZ-2G3H1R 8GB
Micron Technology 8ATF1G64AZ-2G3H1R 8GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
G Skill Intl F4-3200C16-8GVS 8GB
G Skill Intl F4-3200C16-8GVS 8GB
内存RAM
Kingston 99U5595-005.A00LF 2GB
Kingston 99U5595-005.A00LF 2GB
G Skill Intl F4-3200C16-4GVRB 4GB
G Skill Intl F4-3200C16-4GVRB 4GB
内存RAM