Samsung M3 93T5750CZA-CE6 2GB vs Corsair CMT32GX4M2E3200C16 16GB

总分

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分

Corsair CMT32GX4M2E3200C16 16GB

Corsair CMT32GX4M2E3200C16 16GB

差异规格评论

差异

Samsung M3 93T5750CZA-CE6 2GB

需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 15.5

测试中的平均数值
更快的写入速度，GB/s

2,622.0 14.1

测试中的平均数值

Corsair CMT32GX4M2E3200C16 16GB

需要考虑的原因
Corsair CMT32GX4M2E3200C16 16GB

报告一个错误

低于PassMark测试中的延时，ns

42 77

左右 -83% 更低的延时
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Samsung M3 93T5750CZA-CE6 2GB

Corsair CMT32GX4M2E3200C16 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 42
读取速度，GB/s

3,405.2 15.5
写入速度，GB/s

2,622.0 14.1
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

763 3170

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Kingston 99U5665-004.A00G 4GB

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Samsung 1600 CL10 Series 8GB

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SK Hynix HMA82GR7AFR8N-VK 16GB

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Nanya Technology NT8GA64D88AX3S-HR 8GB

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TwinMOS 8DPT5MK8-TATP 2GB

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Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Corsair CMW64GX4M4A2666C16 16GB

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Kingston 2GB-DDR2 800Mhz 2GB

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Corsair CM4X8GF2400Z16K4 8GB

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Kingston 99U5474-010.A00LF 2GB

Apacer Technology 78.CAGQ7.ARC0B 8GB

Apacer Technology 78.CAGQ7.ARC0B 8GB