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Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology BLS16G4D30AESC.M16FE 16GB
比较
Samsung M3 93T5750CZA-CE6 2GB vs Crucial Technology BLS16G4D30AESC.M16FE 16GB
总分
Samsung M3 93T5750CZA-CE6 2GB
总分
Crucial Technology BLS16G4D30AESC.M16FE 16GB
差异
规格
评论
差异
需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB
报告一个错误
更快的读取速度,GB/s
3
17.4
测试中的平均数值
更快的写入速度,GB/s
2,622.0
13.1
测试中的平均数值
需要考虑的原因
Crucial Technology BLS16G4D30AESC.M16FE 16GB
报告一个错误
低于PassMark测试中的延时,ns
28
77
左右 -175% 更低的延时
更高的内存带宽,mbps
19200
5300
左右 3.62 更高的带宽
规格
完整的技术规格清单
Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology BLS16G4D30AESC.M16FE 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
77
28
读取速度,GB/s
3,405.2
17.4
写入速度,GB/s
2,622.0
13.1
内存带宽,mbps
5300
19200
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
763
3437
Samsung M3 93T5750CZA-CE6 2GB RAM的比较
takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB
Crucial Technology BLS16G4D30AESC.M16FE 16GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Kingston 9965516-112.A00LF 16GB
Corsair CMN32GX4M2Z4600C18 16GB
Samsung 1600 CL10 Series 8GB
Kingmax Semiconductor GSJF62F-DA---------- 4GB
Kingston 9905403-090.A01LF 4GB
Crucial Technology CT8G4DFD824A.C16FF 8GB
Corsair VSA2GSDS667C4 2GB
Crucial Technology BL16G32C16S4B.M16FE1 16GB
Kingston KHX1600C9D3/8G 8GB
Corsair CMU32GX4M4C3000C15 8GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Kingston ACR24D4U7D8MB-16 16GB
A-DATA Technology DQKD1A08 1GB
Crucial Technology CT8G4SFS632A.C4FE 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMD64GX4M4B3466C16 16GB
Samsung 1600 CL10 Series 8GB
Corsair CMD32GX4M4A2400C14 8GB
SK Hynix HMA82GS6CJR8N-VK 16GB
Micron Technology 8ATF1G64AZ-2G6H1 8GB
Samsung M393B1K70CH0-CH9 8GB
Kingston 9905711-032.A00G 8GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Crucial Technology CT16G4DFD824A.M16FH 16GB
Samsung M393B5270CH0-CH9 4GB
Transcend Information JM2666HLB-8G 8GB
A-DATA Technology DOVF1B163G2G 2GB
G Skill Intl F4-3000C16-8GRS 8GB
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