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Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology CB16GS2400.C16J 16GB

Samsung M3 93T5750CZA-CE6 2GB vs Crucial Technology CB16GS2400.C16J 16GB

总分
star star star star star
Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分
star star star star star
Crucial Technology CB16GS2400.C16J 16GB

Crucial Technology CB16GS2400.C16J 16GB

差异 规格 评论

差异

Samsung M3 93T5750CZA-CE6 2GB 需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 12
    测试中的平均数值
Crucial Technology CB16GS2400.C16J 16GB 需要考虑的原因
Crucial Technology CB16GS2400.C16J 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    66 left arrow 77
    左右 -17% 更低的延时
  • 更快的写入速度，GB/s
    7.4 left arrow 2,622.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 5300
    左右 3.62 更高的带宽

规格

完整的技术规格清单
Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology CB16GS2400.C16J 16GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    77 left arrow 66
  • 读取速度，GB/s
    3,405.2 left arrow 12.0
  • 写入速度，GB/s
    2,622.0 left arrow 7.4
  • 内存带宽，mbps
    5300 left arrow 19200
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    763 left arrow 1909

Samsung M3 93T5750CZA-CE6 2GB RAM的比较

takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB

Crucial Technology CB16GS2400.C16J 16GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
AMD R5316G1609U2K 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology CB16GS2400.C16J 16GB
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内存RAM
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G Skill Intl F4-3200C14-16GTZR 16GB
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Shanghai Kuxin Microelectronics Ltd NMUD480E82-2666 8GB
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SK Hynix HMA851U6CJR6N-UH 4GB
内存RAM
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
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Samsung M471A2K43EB1-CTD 16GB
内存RAM
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Samsung M471A1G44AB0-CWE 8GB
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内存RAM
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内存RAM
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Samsung M3 78T5663RZ3-CE6 2GB
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内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
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Samsung V-GeN D4S8GL30A8TX5 8GB
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