Samsung M3 93T5750CZA-CE6 2GB vs Crucial Technology CT16G4DFD8213.16FDD1 16GB

总分

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分

Crucial Technology CT16G4DFD8213.16FDD1 16GB

Crucial Technology CT16G4DFD8213.16FDD1 16GB

差异规格评论

差异

Samsung M3 93T5750CZA-CE6 2GB

需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 13.6

测试中的平均数值

Crucial Technology CT16G4DFD8213.16FDD1 16GB

需要考虑的原因
Crucial Technology CT16G4DFD8213.16FDD1 16GB

报告一个错误

低于PassMark测试中的延时，ns

76 77

左右 -1% 更低的延时
更快的写入速度，GB/s

6.4 2,622.0

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Samsung M3 93T5750CZA-CE6 2GB

Crucial Technology CT16G4DFD8213.16FDD1 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 76
读取速度，GB/s

3,405.2 13.6
写入速度，GB/s

2,622.0 6.4
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

763 1624

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Nanya Technology NT4GC64C88B1NS-DI 4GB

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Samsung M3 93T5750CZA-CE6 2GB

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Crucial Technology CT16G4DFD8213.16FDD1 16GB

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Team Group Inc. TEAMGROUP-D4-3866 4GB

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Essencore Limited IM48GU48A30-GIIHM 8GB

Essencore Limited IM48GU48A30-GIIHM 8GB

Kingston 99U5469-046.A00LF 4GB

Kingston 99U5469-046.A00LF 4GB

Avant Technology W641GU42J7240NC 8GB

Avant Technology W641GU42J7240NC 8GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

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Crucial Technology CT4G4SFS824A.C8FE 4GB

Crucial Technology CT4G4SFS824A.C8FE 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Crucial Technology BLS4G4D240FSE.8FBD 4GB

Kingston KHX2400C15/8G 8GB

Kingston KHX2400C15/8G 8GB

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

Kingston HP26D4U9S8MD-8 8GB

Kingston HP26D4U9S8MD-8 8GB