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Samsung M393B1G70BH0-CK0 8GB
G Skill Intl F4-3200C14-8GTZSW 8GB

Samsung M393B1G70BH0-CK0 8GB vs G Skill Intl F4-3200C14-8GTZSW 8GB

总分
star star star star star
Samsung M393B1G70BH0-CK0 8GB

Samsung M393B1G70BH0-CK0 8GB

总分
star star star star star
G Skill Intl F4-3200C14-8GTZSW 8GB

G Skill Intl F4-3200C14-8GTZSW 8GB

差异 规格 评论

差异

Samsung M393B1G70BH0-CK0 8GB 需要考虑的原因
Samsung M393B1G70BH0-CK0 8GB
报告一个错误
G Skill Intl F4-3200C14-8GTZSW 8GB 需要考虑的原因
G Skill Intl F4-3200C14-8GTZSW 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    32 left arrow 51
    左右 -59% 更低的延时
  • 更快的读取速度，GB/s
    15.6 left arrow 9.8
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.2 left arrow 8.1
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 12800
    左右 1.33 更高的带宽

规格

完整的技术规格清单
Samsung M393B1G70BH0-CK0 8GB
G Skill Intl F4-3200C14-8GTZSW 8GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    51 left arrow 32
  • 读取速度，GB/s
    9.8 left arrow 15.6
  • 写入速度，GB/s
    8.1 left arrow 13.2
  • 内存带宽，mbps
    12800 left arrow 17000
Other
  • 描述
    PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    9-9-9-24 / 1600 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2208 left arrow 3000

Samsung M393B1G70BH0-CK0 8GB RAM的比较

TwinMOS 9DEPBOZE-TATP 8GB
SK Hynix HMT125U6TFR8C-H9 2GB

G Skill Intl F4-3200C14-8GTZSW 8GB RAM的比较

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

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内存RAM
Samsung M393B1G70BH0-CK0 8GB
Samsung M393B1G70BH0-CK0 8GB
G Skill Intl F4-3200C14-8GTZSW 8GB
G Skill Intl F4-3200C14-8GTZSW 8GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
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内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
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内存RAM
Corsair CMZ16GX3M2A2400C10 8GB
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内存RAM
Swissbit MEU25664D6BC2EP-30 2GB
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内存RAM
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Golden Empire 1GB DDR2 800 CAS=4 1GB
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A-DATA Technology AO2P32NC8W1-BD3SHC 8GB
内存RAM
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Peak Electronics 256X64M-67E 2GB
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Corsair CMV4GX4M1A2666C18 4GB
内存RAM
TwinMOS 8DPT5MK8-TATP 2GB
TwinMOS 8DPT5MK8-TATP 2GB
Crucial Technology BLS16G4D30AESB.M16FE 16GB
Crucial Technology BLS16G4D30AESB.M16FE 16GB
内存RAM
Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Corsair CMK8GX4M2B3000C15 4GB
Corsair CMK8GX4M2B3000C15 4GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
Corsair CMK16GX4M2B3000C15 8GB
Corsair CMK16GX4M2B3000C15 8GB
内存RAM
Micron Technology 4ATF1G64HZ-3G2E2 8GB
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Crucial Technology CT8G4DFRA32A.M8FR 8GB
内存RAM
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Samsung 1600 CL10 Series 8GB
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Micron Technology 16G3200CL22 16GB
内存RAM
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Samsung M393B1G70BH0-YK0 8GB
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Patriot Memory (PDP Systems) 3733 C17 Series 8GB
内存RAM