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Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology CT4G4DFS8213.C8FADP 4GB

Samsung M3 93T5750CZA-CE6 2GB vs Crucial Technology CT4G4DFS8213.C8FADP 4GB

总分
star star star star star
Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分
star star star star star
Crucial Technology CT4G4DFS8213.C8FADP 4GB

Crucial Technology CT4G4DFS8213.C8FADP 4GB

差异 规格 评论

差异

Samsung M3 93T5750CZA-CE6 2GB 需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 14.5
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,622.0 left arrow 10.8
    测试中的平均数值
Crucial Technology CT4G4DFS8213.C8FADP 4GB 需要考虑的原因
Crucial Technology CT4G4DFS8213.C8FADP 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    32 left arrow 77
    左右 -141% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 5300
    左右 3.21 更高的带宽

规格

完整的技术规格清单
Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology CT4G4DFS8213.C8FADP 4GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    77 left arrow 32
  • 读取速度，GB/s
    3,405.2 left arrow 14.5
  • 写入速度，GB/s
    2,622.0 left arrow 10.8
  • 内存带宽，mbps
    5300 left arrow 17000
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    763 left arrow 2399

Samsung M3 93T5750CZA-CE6 2GB RAM的比较

takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB

Crucial Technology CT4G4DFS8213.C8FADP 4GB RAM的比较

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Crucial Technology CT4G4DFS8213.C8FADP 4GB
Crucial Technology CT4G4DFS8213.C8FADP 4GB
内存RAM
Elpida EBJ21UE8BDF0-DJ-F 2GB
Elpida EBJ21UE8BDF0-DJ-F 2GB
Crucial Technology CT4G4DFS824A.C8FADP 4GB
Crucial Technology CT4G4DFS824A.C8FADP 4GB
内存RAM
G Skill Intl F3-14900CL8-4GBXM 4GB
G Skill Intl F3-14900CL8-4GBXM 4GB
Crucial Technology CT16G4SFD824A.M16FE 16GB
Crucial Technology CT16G4SFD824A.M16FE 16GB
内存RAM
Micron Technology 18HTF12872AY-800F1 1GB
Micron Technology 18HTF12872AY-800F1 1GB
Kingston 9905700-053.A00G 8GB
Kingston 9905700-053.A00G 8GB
内存RAM
Team Group Inc. UD5-6400 16GB
Team Group Inc. UD5-6400 16GB
Kingmax Semiconductor GLLG43F-D8KBGA------ 8GB
Kingmax Semiconductor GLLG43F-D8KBGA------ 8GB
内存RAM
Crucial Technology BL16G32C16U4B.16FE 16GB
Crucial Technology BL16G32C16U4B.16FE 16GB
Corsair CMK64GX4M4A2400C16 16GB
Corsair CMK64GX4M4A2400C16 16GB
内存RAM
Kingston K531R8-MIN 4GB
Kingston K531R8-MIN 4GB
Patriot Memory (PDP Systems) 2800 C16 Series 8GB
Patriot Memory (PDP Systems) 2800 C16 Series 8GB
内存RAM
AMD R5316G1609U2K 8GB
AMD R5316G1609U2K 8GB
Kingston ACR32D4S2S1ME-8 8GB
Kingston ACR32D4S2S1ME-8 8GB
内存RAM
Corsair CMX4GX3M2A1600C9 2GB
Corsair CMX4GX3M2A1600C9 2GB
Corsair CMN32GX4M2Z4600C18 16GB
Corsair CMN32GX4M2Z4600C18 16GB
内存RAM
Samsung M391B5673EH1-CH9 2GB
Samsung M391B5673EH1-CH9 2GB
A-DATA Technology DDR4 2133 2OZ 8GB
A-DATA Technology DDR4 2133 2OZ 8GB
内存RAM
Kingston 99U5474-022.A00LF 2GB
Kingston 99U5474-022.A00LF 2GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-UH 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N
内存RAM
Kingston 9965516-112.A00LF 16GB
Kingston 9965516-112.A00LF 16GB
G Skill Intl F4-3600C16-16GTRGC 16GB
G Skill Intl F4-3600C16-16GTRGC 16GB
内存RAM
Elpida EBE21UE8ACUA-8G-E 2GB
Elpida EBE21UE8ACUA-8G-E 2GB
Corsair CMK32GX4M4C3000C15 8GB
Corsair CMK32GX4M4C3000C15 8GB
内存RAM
Kingston 99U5403-468.A00LF 8GB
Kingston 99U5403-468.A00LF 8GB
Crucial Technology CT16G4DFD832A.C16FN 16GB
Crucial Technology CT16G4DFD832A.C16FN 16GB
内存RAM