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Samsung M3 93T5750CZA-CE6 2GB
G Skill Intl F4-2933C14-8GFX 8GB

Samsung M3 93T5750CZA-CE6 2GB vs G Skill Intl F4-2933C14-8GFX 8GB

总分
star star star star star
Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分
star star star star star
G Skill Intl F4-2933C14-8GFX 8GB

G Skill Intl F4-2933C14-8GFX 8GB

差异 规格 评论

差异

Samsung M3 93T5750CZA-CE6 2GB 需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 17.3
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,622.0 left arrow 10.0
    测试中的平均数值
G Skill Intl F4-2933C14-8GFX 8GB 需要考虑的原因
G Skill Intl F4-2933C14-8GFX 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    64 left arrow 77
    左右 -20% 更低的延时
  • 更高的内存带宽，mbps
    19200 left arrow 5300
    左右 3.62 更高的带宽

规格

完整的技术规格清单
Samsung M3 93T5750CZA-CE6 2GB
G Skill Intl F4-2933C14-8GFX 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    77 left arrow 64
  • 读取速度，GB/s
    3,405.2 left arrow 17.3
  • 写入速度，GB/s
    2,622.0 left arrow 10.0
  • 内存带宽，mbps
    5300 left arrow 19200
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 9 11 13 15 16
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    763 left arrow 2181

Samsung M3 93T5750CZA-CE6 2GB RAM的比较

takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB

G Skill Intl F4-2933C14-8GFX 8GB RAM的比较

TwinMOS 8DPT5MK8-TATP 2GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Nanya Technology M2X4G64CB8HG9N-DG 4GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Corsair CMW32GX4M2C3466C16 16GB
Corsair CMW32GX4M2C3466C16 16GB
内存RAM
Kingston 9965525-140.A00LF 8GB
Kingston 9965525-140.A00LF 8GB
Transcend Information TS1GLH64V4H 8GB
Transcend Information TS1GLH64V4H 8GB
内存RAM
Kingston 9905403-447.A00LF 4GB
Kingston 9905403-447.A00LF 4GB
Samsung M378A1K43CB2-CTD 8GB
Samsung M378A1K43CB2-CTD 8GB
内存RAM
Kingston 9905403-515.A00LF 8GB
Kingston 9905403-515.A00LF 8GB
Corsair CMK16GX4M2Z3600C14 8GB
Corsair CMK16GX4M2Z3600C14 8GB
内存RAM
G Skill Intl F3-14900CL9-4GBSR 4GB
G Skill Intl F3-14900CL9-4GBSR 4GB
G Skill Intl F4-4000C16-16GVKA 16GB
G Skill Intl F4-4000C16-16GVKA 16GB
内存RAM
Samsung M378B5273DH0-CH9 4GB
Samsung M378B5273DH0-CH9 4GB
Corsair CMK16GX4M2L3200C16 8GB
Corsair CMK16GX4M2L3200C16 8GB
内存RAM
Kingston 99U5474-028.A00LF 4GB
Kingston 99U5474-028.A00LF 4GB
G Skill Intl F4-4266C19-8GTZA 8GB
G Skill Intl F4-4266C19-8GTZA 8GB
内存RAM
Kingston 99U5471-030.A00LF 8GB
Kingston 99U5471-030.A00LF 8GB
SK Hynix HMA81GS6CJR8N-UH 8GB
SK Hynix HMA81GS6CJR8N-UH 8GB
内存RAM
Kingston 9965516-430.A00G 16GB
Kingston 9965516-430.A00G 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
内存RAM
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Patriot Memory (PDP Systems) PSD38G1600L2S 8GB
Corsair CM4X8GF2400C14K4 8GB
Corsair CM4X8GF2400C14K4 8GB
内存RAM
Team Group Inc. Team-Value-800 2GB
Team Group Inc. Team-Value-800 2GB
Apacer Technology 78.D2GF2.4010B 16GB
Apacer Technology 78.D2GF2.4010B 16GB
内存RAM
Patriot Memory (PDP Systems) PSD34G16002 4GB
Patriot Memory (PDP Systems) PSD34G16002 4GB
Crucial Technology CT4G4DFS8266.M8FF 4GB
Crucial Technology CT4G4DFS8266.M8FF 4GB
内存RAM
Team Group Inc. Team-Elite-1333 4GB
Team Group Inc. Team-Elite-1333 4GB
Crucial Technology BLS8G4D240FSBK.8FBD 8GB
Crucial Technology BLS8G4D240FSBK.8FBD 8GB
内存RAM
Kingston 9965516-112.A00LF 16GB
Kingston 9965516-112.A00LF 16GB
Kingston 9965589-008.D01G 8GB
Kingston 9965589-008.D01G 8GB
内存RAM