Samsung M3 93T5750CZA-CE6 2GB vs G Skill Intl F4-4000C17-8GVKB 8GB

总分

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分

G Skill Intl F4-4000C17-8GVKB 8GB

G Skill Intl F4-4000C17-8GVKB 8GB

差异规格评论

差异

Samsung M3 93T5750CZA-CE6 2GB

需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 20.7

测试中的平均数值
更快的写入速度，GB/s

2,622.0 19.2

测试中的平均数值

G Skill Intl F4-4000C17-8GVKB 8GB

需要考虑的原因
G Skill Intl F4-4000C17-8GVKB 8GB

报告一个错误

低于PassMark测试中的延时，ns

20 77

左右 -285% 更低的延时
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Samsung M3 93T5750CZA-CE6 2GB

G Skill Intl F4-4000C17-8GVKB 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 20
读取速度，GB/s

3,405.2 20.7
写入速度，GB/s

2,622.0 19.2
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

763 4235

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kingston 99U5474-028.A00LF 4GB

Kingston 99U5474-028.A00LF 4GB

G Skill Intl F4-3000C14-8GTZR 8GB

G Skill Intl F4-3000C14-8GTZR 8GB

Samsung M471A2G43AB2-CWE 16GB

Samsung M471A2G43AB2-CWE 16GB

Samsung M471A2G43AB2-CWE 16GB

Samsung M471A2G43AB2-CWE 16GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

Wilk Elektronik S.A. GY1866D364L9A/4G 4GB

G Skill Intl F4-3200C16-16GIS 16GB

G Skill Intl F4-3200C16-16GIS 16GB

Samsung M471B1G73QH0-YK0 8GB

Samsung M471B1G73QH0-YK0 8GB

A-DATA Technology DDR4 2400 2OZ 8GB

A-DATA Technology DDR4 2400 2OZ 8GB

Corsair CMY8GX3M2A2666C10 4GB

Corsair CMY8GX3M2A2666C10 4GB

Samsung M393B5270CH0-CH9 4GB

Samsung M393B5270CH0-CH9 4GB

Nanya Technology M2F4G64CB8HB9N-CG 4GB

Nanya Technology M2F4G64CB8HB9N-CG 4GB

Crucial Technology BL16G32C16U4WL.M16FE 16GB

Crucial Technology BL16G32C16U4WL.M16FE 16GB

Kingston 99U5428-063.A00LF 8GB

Kingston 99U5428-063.A00LF 8GB

Avant Technology W641GU42J9266NB 8GB

Avant Technology W641GU42J9266NB 8GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Crucial Technology BLT8G4D26BFT4K.C8FD 8GB

Crucial Technology BLT8G4D26BFT4K.C8FD 8GB

Kingston 9905316-106.A02LF 1GB

Kingston 9905316-106.A02LF 1GB

G Skill Intl F4-4400C18-8GTRS 8GB

G Skill Intl F4-4400C18-8GTRS 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Gloway International Co. Ltd. TYA4U3000E16081C 8GB

Gloway International Co. Ltd. TYA4U3000E16081C 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Corsair CMK16GX4M1A2666C16 16GB

Corsair CMK16GX4M1A2666C16 16GB

Kingston 99U5471-056.A00LF 8GB

Kingston 99U5471-056.A00LF 8GB

Crucial Technology CT8G4DFS8213.C8FDD1 8GB

Crucial Technology CT8G4DFS8213.C8FDD1 8GB

Samsung M378B5173BH0-CH9 4GB

Samsung M378B5173BH0-CH9 4GB

Corsair CMR32GX4M2C3333C16 16GB

Corsair CMR32GX4M2C3333C16 16GB

SK Hynix HMA82GS6CJR8N-VK 16GB

SK Hynix HMA82GS6CJR8N-VK 16GB

Samsung M471A1A43CB1-CRC 8GB

Samsung M471A1A43CB1-CRC 8GB