Samsung M3 93T5750CZA-CE6 2GB vs G Skill Intl F4-4200C19-4GTZ 4GB

总分

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分

G Skill Intl F4-4200C19-4GTZ 4GB

G Skill Intl F4-4200C19-4GTZ 4GB

差异规格评论

差异

Samsung M3 93T5750CZA-CE6 2GB

需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 14.5

测试中的平均数值

G Skill Intl F4-4200C19-4GTZ 4GB

需要考虑的原因
G Skill Intl F4-4200C19-4GTZ 4GB

报告一个错误

低于PassMark测试中的延时，ns

75 77

左右 -3% 更低的延时
更快的写入速度，GB/s

7.6 2,622.0

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Samsung M3 93T5750CZA-CE6 2GB

G Skill Intl F4-4200C19-4GTZ 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 75
读取速度，GB/s

3,405.2 14.5
写入速度，GB/s

2,622.0 7.6
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

763 1735

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Nanya Technology NT4GC64B8HG0NS-CG 4GB

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Micron Technology 18ASF2G72PDZ-2G6H1R 16GB

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Samsung M3 93T5750CZA-CE6 2GB

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G Skill Intl F4-4200C19-4GTZ 4GB

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Crucial Technology CT102464BA160B.M16 8GB

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Corsair CMD16GX4M4C3200C16 4GB

Corsair CMD16GX4M4C3200C16 4GB

Team Group Inc. UD5-6400 16GB

Team Group Inc. UD5-6400 16GB

Chun Well Technology Holding Limited D4U0832161B 8GB

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A-DATA Technology AM2U16BC4P2-B05B 4GB

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Mushkin MRA4S320GJJM32G 32GB

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Kingston KHX1600C9D3/8G 8GB

Kingston KHX1600C9D3/8G 8GB

Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR8N-TF 8GB

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AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

G Skill Intl F4-3200C15-8GTZKO 8GB

G Skill Intl F4-3200C15-8GTZKO 8GB

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G Skill Intl F4-3000C14-16GVR 16GB

G Skill Intl F4-3000C14-16GVR 16GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F5-6400J3239G16G 16GB

G Skill Intl F4-3466C18-8GSXW 8GB

G Skill Intl F4-3466C18-8GSXW 8GB

Peak Electronics 256X64M-67E 2GB

Peak Electronics 256X64M-67E 2GB

Kingston KHX3466C16D4/8GX 8GB

Kingston KHX3466C16D4/8GX 8GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

SK Hynix HMA41GR7AFR8N-UH 8GB

SK Hynix HMA41GR7AFR8N-UH 8GB

Samsung M471B5673FH0-CF8 2GB

Samsung M471B5673FH0-CF8 2GB

InnoDisk Corporation M4S0-4GSSNCSJ 4GB

InnoDisk Corporation M4S0-4GSSNCSJ 4GB

Kingston 99U5474-037.A00LF 4GB

Kingston 99U5474-037.A00LF 4GB

Panram International Corporation L421008G4C1528K34O8A 8GB

Panram International Corporation L421008G4C1528K34O8A 8