Samsung M3 93T5750CZA-CE6 2GB vs Golden Empire CL14-16-16 D4-2400 16GB

总分

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分

Golden Empire CL14-16-16 D4-2400 16GB

Golden Empire CL14-16-16 D4-2400 16GB

差异规格评论

差异

Samsung M3 93T5750CZA-CE6 2GB

需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 16.5

测试中的平均数值
更快的写入速度，GB/s

2,622.0 12.6

测试中的平均数值

Golden Empire CL14-16-16 D4-2400 16GB

需要考虑的原因
Golden Empire CL14-16-16 D4-2400 16GB

报告一个错误

低于PassMark测试中的延时，ns

28 77

左右 -175% 更低的延时
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Samsung M3 93T5750CZA-CE6 2GB

Golden Empire CL14-16-16 D4-2400 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 28
读取速度，GB/s

3,405.2 16.5
写入速度，GB/s

2,622.0 12.6
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

763 2903

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT51264BA1339.C16F 4GB

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Chun Well Technology Holding Limited D4U0836144B 8GB

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Kingston 9905403-156.A00LF 2GB

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Crucial Technology CT4G4DFS824A.C8FF 4GB

Crucial Technology CT4G4DFS824A.C8FF 4GB

Kingston 99U5595-005.A00LF 2GB

Kingston 99U5595-005.A00LF 2GB

Micron Technology 36ASF4G72PZ-2G1B1 32GB

Micron Technology 36ASF4G72PZ-2G1B1 32GB

Samsung M386B4G70DM0-CMA4 32GB

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Good Wealth Technology Ltd. 8GB

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Patriot Memory (PDP Systems) PSD34G16002 4GB

Patriot Memory (PDP Systems) PSD34G16002 4GB

Kingston KMKYF9-MIB 8GB

Kingston KMKYF9-MIB 8GB

Apacer Technology 78.A1GC6.9H10C 2GB

Apacer Technology 78.A1GC6.9H10C 2GB

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SK Hynix HMAA4GU6AJR8N-XN 32GB