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Samsung M3 93T5750CZA-CE6 2GB
Hoodisk Electronics Co Ltd NMUD480E81-3200 8GB

Samsung M3 93T5750CZA-CE6 2GB vs Hoodisk Electronics Co Ltd NMUD480E81-3200 8GB

总分
star star star star star
Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分
star star star star star
Hoodisk Electronics Co Ltd NMUD480E81-3200 8GB

Hoodisk Electronics Co Ltd NMUD480E81-3200 8GB

差异 规格 评论

差异

Samsung M3 93T5750CZA-CE6 2GB 需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 17.2
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,622.0 left arrow 12.4
    测试中的平均数值
Hoodisk Electronics Co Ltd NMUD480E81-3200 8GB 需要考虑的原因
Hoodisk Electronics Co Ltd NMUD480E81-3200 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    22 left arrow 77
    左右 -250% 更低的延时
  • 更高的内存带宽，mbps
    19200 left arrow 5300
    左右 3.62 更高的带宽

规格

完整的技术规格清单
Samsung M3 93T5750CZA-CE6 2GB
Hoodisk Electronics Co Ltd NMUD480E81-3200 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    77 left arrow 22
  • 读取速度，GB/s
    3,405.2 left arrow 17.2
  • 写入速度，GB/s
    2,622.0 left arrow 12.4
  • 内存带宽，mbps
    5300 left arrow 19200
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-19200, 1.2V, CAS Supported: 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    763 left arrow 3035

Samsung M3 93T5750CZA-CE6 2GB RAM的比较

takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB

Hoodisk Electronics Co Ltd NMUD480E81-3200 8GB RAM的比较

STEC (Silicon Tech) S1024R3NN2QK-I 1GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Hoodisk Electronics Co Ltd NMUD480E81-3200 8GB
Hoodisk Electronics Co Ltd NMUD480E81-3200 8GB
内存RAM
SK Hynix HMT31GR7BFR4C-H9 8GB
SK Hynix HMT31GR7BFR4C-H9 8GB
Transcend Information TS2GLH64V6B 16GB
Transcend Information TS2GLH64V6B 16GB
内存RAM
Elpida EBJ21UE8BDF0-DJ-F 2GB
Elpida EBJ21UE8BDF0-DJ-F 2GB
Corsair CMD128GX4M8B2800C14 16GB
Corsair CMD128GX4M8B2800C14 16GB
内存RAM
Kingston ACR512X64D3S13C9G 4GB
Kingston ACR512X64D3S13C9G 4GB
G Skill Intl F4-3200C14-8GTZKY 8GB
G Skill Intl F4-3200C14-8GTZKY 8GB
内存RAM
Team Group Inc. Team-Value-800 2GB
Team Group Inc. Team-Value-800 2GB
GIGA - BYTE Technology Co Ltd GP-ARS16G33 8GB
GIGA - BYTE Technology Co Ltd GP-ARS16G33 8GB
内存RAM
Samsung M4 70T5663CZ3-CE6 2GB
Samsung M4 70T5663CZ3-CE6 2GB
Kingston 9905630-039.A00G 16GB
Kingston 9905630-039.A00G 16GB
内存RAM
Kingston 99U5584-007.A00LF 4GB
Kingston 99U5584-007.A00LF 4GB
V-GEN D4S8GL30A8TS5 8GB
V-GEN D4S8GL30A8TS5 8GB
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
V-Color Technology Inc. TA48G30S815G 8GB
V-Color Technology Inc. TA48G30S815G 8GB
内存RAM
Samsung M471B5173QH0-YK0 4GB
Samsung M471B5173QH0-YK0 4GB
Micron Technology 36ASF4G72PZ-2G6H1 32GB
Micron Technology 36ASF4G72PZ-2G6H1 32GB
内存RAM
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
G Skill Intl F4-3200C16-4GTZB 4GB
G Skill Intl F4-3200C16-4GTZB 4GB
内存RAM
Apacer Technology 78.01G86.9H50C 1GB
Apacer Technology 78.01G86.9H50C 1GB
Crucial Technology CB4GU2400.M8E 4GB
Crucial Technology CB4GU2400.M8E 4GB
内存RAM
Kingston 9965525-018.A00LF 4GB
Kingston 9965525-018.A00LF 4GB
Samsung M378A2K43BB1-CPB 16GB
Samsung M378A2K43BB1-CPB 16GB
内存RAM
A-DATA Technology ADOVE1A0834E 1GB
A-DATA Technology ADOVE1A0834E 1GB
G Skill Intl F4-4400C16-8GVK 8GB
G Skill Intl F4-4400C16-8GVK 8GB
内存RAM
Crucial Technology CT102464BA160B.M16 8GB
Crucial Technology CT102464BA160B.M16 8GB
A-DATA Technology AM1P26KC8T1-BAAS 8GB
A-DATA Technology AM1P26KC8T1-BAAS 8GB
内存RAM