Samsung M3 93T5750CZA-CE6 2GB vs Hyundai Inc GR26C16S8K2HU416 8GB

总分

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分

Hyundai Inc GR26C16S8K2HU416 8GB

Hyundai Inc GR26C16S8K2HU416 8GB

差异规格评论

差异

Samsung M3 93T5750CZA-CE6 2GB

需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 17.4

测试中的平均数值
更快的写入速度，GB/s

2,622.0 13.6

测试中的平均数值

Hyundai Inc GR26C16S8K2HU416 8GB

需要考虑的原因
Hyundai Inc GR26C16S8K2HU416 8GB

报告一个错误

低于PassMark测试中的延时，ns

22 77

左右 -250% 更低的延时
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

Samsung M3 93T5750CZA-CE6 2GB

Hyundai Inc GR26C16S8K2HU416 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 22
读取速度，GB/s

3,405.2 17.4
写入速度，GB/s

2,622.0 13.6
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

763 3182

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT4G4DFS8213.C8FAR1 4GB

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Corsair CMD8GX3M2A2933C12 4GB

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Samsung M471B5273DH0-CH9 4GB

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Samsung M3 93T5750CZA-CE6 2GB

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Hyundai Inc GR26C16S8K2HU416 8GB

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Elpida EBJ21UE8BDF0-DJ-F 2GB

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Crucial Technology BLS4G4S26BFSD.8FBR2 4GB

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G Skill Intl F3-2666C12-8GTXD 8GB

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Samsung M393A2K40CB2-CTD 16GB

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Shenzhen Technology Co Ltd 8GB

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G Skill Intl F4-2933C14-8GFX 8GB

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Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

Micron Technology 18ASF2G72PZ-2G3B1 16GB

Micron Technology 18ASF2G72PZ-2G3B1 16GB