Samsung M3 93T5750CZA-CE6 2GB vs INTENSO 5641162 8GB

总分

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分

INTENSO 5641162 8GB

INTENSO 5641162 8GB

差异规格评论

差异

Samsung M3 93T5750CZA-CE6 2GB

需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 16.2

测试中的平均数值
更快的写入速度，GB/s

2,622.0 11.7

测试中的平均数值

INTENSO 5641162 8GB

需要考虑的原因
INTENSO 5641162 8GB

报告一个错误

低于PassMark测试中的延时，ns

23 77

左右 -235% 更低的延时
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Samsung M3 93T5750CZA-CE6 2GB

INTENSO 5641162 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 23
读取速度，GB/s

3,405.2 16.2
写入速度，GB/s

2,622.0 11.7
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

763 2799

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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Kingston 9905624-051.A00G 8GB

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Micron Technology 16JTF51264HZ-1G6M1 4GB

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Kingston 9965669-025.A00G 8GB

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Kingston 99U5469-045.A00LF 4GB

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Kingston KHX2666C16D4/4G 4GB

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Samsung M3 93T5750CZA-CE6 2GB

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Kingston 9965662-016.A00G 16GB

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Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

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Unifosa Corporation HU564404EP0200 4GB

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G Skill Intl F4-2400C15-8GNS 8GB

G Skill Intl F4-2400C15-8GNS 8GB

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Samsung 1600 CL10 Series 8GB

Gold Key Technology Co Ltd NMUD416E82-4400G 16GB

Gold Key Technology Co Ltd NMUD416E82-4400G 16GB

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Samsung M474A1G43DB0-CPB 8GB

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A-DATA Technology DDR4 3200 8GB

A-DATA Technology DDR4 3200 8GB

Chun Well Technology Holding Limited CL16-18-18 D4-3200 16GB

Chun Well Technology Holding Limited CL16-18-18 D4-3200