Samsung M3 93T5750CZA-CE6 2GB vs Kingston 9905599-010.A00G 4GB

总分

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分

Kingston 9905599-010.A00G 4GB

Kingston 9905599-010.A00G 4GB

差异规格评论

差异

Samsung M3 93T5750CZA-CE6 2GB

需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 16.5

测试中的平均数值
更快的写入速度，GB/s

2,622.0 12.0

测试中的平均数值

Kingston 9905599-010.A00G 4GB

需要考虑的原因
Kingston 9905599-010.A00G 4GB

报告一个错误

低于PassMark测试中的延时，ns

22 77

左右 -250% 更低的延时
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Samsung M3 93T5750CZA-CE6 2GB

Kingston 9905599-010.A00G 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 22
读取速度，GB/s

3,405.2 16.5
写入速度，GB/s

2,622.0 12.0
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

763 2566

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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AMD R538G1601U2S 8GB

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Kingston 9905403-011.A03LF 2GB

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Micron Technology 8ATF2G64AZ-3G2B1 16GB

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Corsair CMK16GX4M2B4266C19 8GB

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Kingston 9965516-430.A00G 16GB

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SK Hynix HYMP512S64CP8-Y5 1GB

Crucial Technology BLS8G4D240FSA.16FAD 8GB

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Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Crucial Technology BLS8G4S26BFSD.16FD2 8GB

Crucial Technology BLS8G4S26BFSD.16FD2 8GB