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Samsung M3 93T5750CZA-CE6 2GB
Kingston 9905625-097.A00G 16GB
比较
Samsung M3 93T5750CZA-CE6 2GB vs Kingston 9905625-097.A00G 16GB
总分
Samsung M3 93T5750CZA-CE6 2GB
总分
Kingston 9905625-097.A00G 16GB
差异
规格
评论
差异
需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB
报告一个错误
更快的读取速度,GB/s
3
17.2
测试中的平均数值
更快的写入速度,GB/s
2,622.0
12.1
测试中的平均数值
需要考虑的原因
Kingston 9905625-097.A00G 16GB
报告一个错误
低于PassMark测试中的延时,ns
29
77
左右 -166% 更低的延时
更高的内存带宽,mbps
19200
5300
左右 3.62 更高的带宽
规格
完整的技术规格清单
Samsung M3 93T5750CZA-CE6 2GB
Kingston 9905625-097.A00G 16GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
77
29
读取速度,GB/s
3,405.2
17.2
写入速度,GB/s
2,622.0
12.1
内存带宽,mbps
5300
19200
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
763
2809
Samsung M3 93T5750CZA-CE6 2GB RAM的比较
takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB
Kingston 9905625-097.A00G 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 9905458-017.A01LF 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Samsung M3 93T5750CZA-CE6 2GB
Kingston 9905625-097.A00G 16GB
Nanya Technology NT4GC64B8HG0NS-CG 4GB
Kingston KV0M5R-MIE 8GB
Apacer Technology 78.01GA0.9K5 1GB
Kingmax Semiconductor GZNG43F-18---------- 8GB
Samsung M471B1G73QH0-YK0 8GB
Crucial Technology CT8G4DFD8213.C16FDR2 8GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Corsair CMSO32GX4M2A2133C15 16GB
Samsung 1600 CL10 Series 8GB
Gloway International (HK) STK4U2400D15082C 8GB
Kingston 9905403-061.A00LF 2GB
Corsair CMK16GX4M4B3333C16 4GB
Kingston KHX3200C18D4/8G 8GB
Samsung M391A1K43BB2-CTD 8GB
Corsair CM3X8GA2400C11Y2R 8GB
Heoriady HX2666CX15D4/4G 4GB
Samsung M4 70T2953EZ3-CE6 1GB
Crucial Technology BLS8G4D240FSA.16FARG 8GB
SK Hynix HMA451U6AFR8N-TF 4GB
G Skill Intl F4-3000C16-16GTZN 16GB
Nanya Technology NT512T64U88B0BY-3C 512MB
Avexir Technologies Corporation DDR4-2800 CL15 4GB 4GB
Samsung M471B5273CH0-CH9 4GB
G Skill Intl F4-4266C19-32GTZR 32GB
Samsung M393B2G70BH0-YK0 16GB
Patriot Memory (PDP Systems) 2400 C17 8GB
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