Samsung M3 93T5750CZA-CE6 2GB vs Micron Technology 16ATF2G64HZ-2G1A1 16GB

总分

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分

Micron Technology 16ATF2G64HZ-2G1A1 16GB

Micron Technology 16ATF2G64HZ-2G1A1 16GB

差异规格评论

差异

Samsung M3 93T5750CZA-CE6 2GB

需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 13.7

测试中的平均数值
更快的写入速度，GB/s

2,622.0 10.6

测试中的平均数值

Micron Technology 16ATF2G64HZ-2G1A1 16GB

需要考虑的原因
Micron Technology 16ATF2G64HZ-2G1A1 16GB

报告一个错误

低于PassMark测试中的延时，ns

36 77

左右 -114% 更低的延时
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Samsung M3 93T5750CZA-CE6 2GB

Micron Technology 16ATF2G64HZ-2G1A1 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 36
读取速度，GB/s

3,405.2 13.7
写入速度，GB/s

2,622.0 10.6
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

763 2504

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

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RAM 2

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Frequency (Mhz) *

Absolute Latency

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最新比较

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Micron Technology 16ATF2G64HZ-2G1A1 16GB

Micron Technology 16ATF2G64HZ-2G1A1 16GB

Kingston 99U5428-063.A00LF 8GB

Kingston 99U5428-063.A00LF 8GB

Corsair CMK128GX4M8B3333C16 16GB

Corsair CMK128GX4M8B3333C16 16GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

A-DATA Technology AM2L16BC4R1-B0AS 4GB

Crucial Technology 16G4UD2400.C16BD1 16GB

Crucial Technology 16G4UD2400.C16BD1 16GB

SK Hynix HYMP125U64CP8-S5 2GB

SK Hynix HYMP125U64CP8-S5 2GB

SK Hynix HYMP125U64CP8-S6 2GB

SK Hynix HYMP125U64CP8-S6 2GB

Kingston 99U5584-001.A00LF 4GB

Kingston 99U5584-001.A00LF 4GB

Corsair CMD32GX4M4B3200C16 8GB

Corsair CMD32GX4M4B3200C16 8GB

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

G Skill Intl F4-3600C17-8GTZR 8GB

G Skill Intl F4-3600C17-8GTZR 8GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB

Hynix Semiconductor (Hyundai Electronics) GKE160SO10240

G Skill Intl F4-2800C15-8GVRB 8GB

G Skill Intl F4-2800C15-8GVRB 8GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

A-DATA Technology AM2U16BC4P2-B05B 4GB

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

Hong Kong Hyunion Electronics DDR4 3200 2OZ 16GB

Kingston 99U5469-045.A00LF 4GB

Kingston 99U5469-045.A00LF 4GB

Crucial Technology CT16G4SFD824A.C16FBR 16GB

Crucial Technology CT16G4SFD824A.C16FBR 16GB

Kingston 99U5471-020.A00LF 4GB

Kingston 99U5471-020.A00LF 4GB

SK Hynix HMA82GS6JJR8N-VK 16GB

SK Hynix HMA82GS6JJR8N-VK 16GB

Elpida EBJ17RG4EFWA-DJ-F 16GB

Elpida EBJ17RG4EFWA-DJ-F 16GB

Samsung M378A4G43AB2-CVF 32GB

Samsung M378A4G43AB2-CVF 32GB

Kingston 9905403-038.A00LF 4GB

Kingston 9905403-038.A00LF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N-TF 4GB

Hynix Semiconductor (Hyundai Electronics) HMA451R7AFR8N

SK Hynix HMA82GS6CJR8N-VK 16GB

SK Hynix HMA82GS6CJR8N-VK 16GB

Samsung M393A2K43BB1-CRC 16GB

Samsung M393A2K43BB1-CRC 16GB

Kingston 99U5469-045.A00LF 4GB

Kingston 99U5469-045.A00LF 4GB

G Skill Intl F4-2400C15-16GVR 16GB

G Skill Intl F4-2400C15-16GVR 16GB