Samsung M3 93T5750CZA-CE6 2GB vs Micron Technology 8ATF51264AZ-2G1A1 4GB

总分

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分

Micron Technology 8ATF51264AZ-2G1A1 4GB

Micron Technology 8ATF51264AZ-2G1A1 4GB

差异规格评论

差异

Samsung M3 93T5750CZA-CE6 2GB

需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 12.2

测试中的平均数值

Micron Technology 8ATF51264AZ-2G1A1 4GB

需要考虑的原因
Micron Technology 8ATF51264AZ-2G1A1 4GB

报告一个错误

低于PassMark测试中的延时，ns

43 77

左右 -79% 更低的延时
更快的写入速度，GB/s

9.7 2,622.0

测试中的平均数值
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Samsung M3 93T5750CZA-CE6 2GB

Micron Technology 8ATF51264AZ-2G1A1 4GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 43
读取速度，GB/s

3,405.2 12.2
写入速度，GB/s

2,622.0 9.7
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

763 2501

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

Micron Technology 8ATF51264AZ-2G1A1 4GB

Micron Technology 8ATF51264AZ-2G1A1 4GB

Corsair CMV4GX3M1B1600C11 4GB

Corsair CMV4GX3M1B1600C11 4GB

Crucial Technology CT8G4SFD8213.C16FADP 8GB

Crucial Technology CT8G4SFD8213.C16FADP 8GB

Kingston 9965516-430.A00G 16GB

Kingston 9965516-430.A00G 16GB

Micron Technology 16ATF2G64HZ-2G3B2 16GB

Micron Technology 16ATF2G64HZ-2G3B2 16GB

Kingston 99U5474-028.A00LF 4GB

Kingston 99U5474-028.A00LF 4GB

G Skill Intl F4-3600C19-8GVRB 8GB

G Skill Intl F4-3600C19-8GVRB 8GB

SK Hynix HMT325S6BFR8C-H9 2GB

SK Hynix HMT325S6BFR8C-H9 2GB

Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB

Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB

Samsung M395T2863QZ4-CF76 1GB

Samsung M395T2863QZ4-CF76 1GB

Patriot Memory (PDP Systems) PSD432G32002 32GB

Patriot Memory (PDP Systems) PSD432G32002 32GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Nanya Technology M2F8G64CB8HC9N-DI 8GB

Crucial Technology BLS4G4S26BFSD.8FBR2 4GB

Crucial Technology BLS4G4S26BFSD.8FBR2 4GB

Kingston KHX2133C11D3/4GX 4GB

Kingston KHX2133C11D3/4GX 4GB

Hewlett-Packard 7EH55AA# 8GB

Hewlett-Packard 7EH55AA# 8GB

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

Nanya Technology M2F4GH64CB8HB6N-CG 4GB

Crucial Technology CT16G4S24AM.M16FE 16GB

Crucial Technology CT16G4S24AM.M16FE 16GB

Kingston 9905471-006.A01LF 4GB

Kingston 9905471-006.A01LF 4GB

Corsair CMK32GX4M2D3600C16 16GB

Corsair CMK32GX4M2D3600C16 16GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Nanya Technology NT4GC72B4NA1NL-CG 4GB

Corsair CMK16GX4M2C3000C15 8GB

Corsair CMK16GX4M2C3000C15 8GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

Patriot Memory (PDP Systems) PSD22G8002 2GB

G Skill Intl F4-3600C18-8GTRG 8GB

G Skill Intl F4-3600C18-8GTRG 8GB

Samsung M3 78T3354BZ0-CCC 256MB

Samsung M3 78T3354BZ0-CCC 256MB

G Skill Intl F4-3200C16-16GSXFB 16GB

G Skill Intl F4-3200C16-16GSXFB 16GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Smart Modular SG564568FG8N6KF-Z2 2GB

Hynix Semiconductor (Hyundai Electronics) GKE800SO51208-2133AH 8GB

Hynix Semiconductor (Hyundai Electronics) GKE800SO51208