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Samsung M3 93T5750CZA-CE6 2GB
Mushkin 99[2/7/4]208F 8GB

Samsung M3 93T5750CZA-CE6 2GB vs Mushkin 99[2/7/4]208F 8GB

总分
star star star star star
Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分
star star star star star
Mushkin 99[2/7/4]208F 8GB

Mushkin 99[2/7/4]208F 8GB

差异 规格 评论

差异

Samsung M3 93T5750CZA-CE6 2GB 需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB
报告一个错误
  • 更快的读取速度，GB/s
    3 left arrow 18.9
    测试中的平均数值
  • 更快的写入速度，GB/s
    2,622.0 left arrow 15.0
    测试中的平均数值
Mushkin 99[2/7/4]208F 8GB 需要考虑的原因
Mushkin 99[2/7/4]208F 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    20 left arrow 77
    左右 -285% 更低的延时
  • 更高的内存带宽，mbps
    17000 left arrow 5300
    左右 3.21 更高的带宽

规格

完整的技术规格清单
Samsung M3 93T5750CZA-CE6 2GB
Mushkin 99[2/7/4]208F 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    77 left arrow 20
  • 读取速度，GB/s
    3,405.2 left arrow 18.9
  • 写入速度，GB/s
    2,622.0 left arrow 15.0
  • 内存带宽，mbps
    5300 left arrow 17000
Other
  • 描述
    PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 left arrow PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 20
  • 时序/时钟速度
    5-5-5-15 / 667 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    763 left arrow 3230

Samsung M3 93T5750CZA-CE6 2GB RAM的比较

takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB

Mushkin 99[2/7/4]208F 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Crucial Technology BLT16G4D30AETA.K16FB 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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内存RAM
SK Hynix HYMP31GF72CMP4D5Y5 8GB
SK Hynix HYMP31GF72CMP4D5Y5 8GB
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A-DATA Technology AX4S2800316G18-B 16GB
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内存RAM
Samsung M393B2G70BH0-CK0 16GB
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Essencore Limited IM48GU88N26-GIIHA 8GB
内存RAM
Samsung M3 93T5750CZA-CE6 2GB
Samsung M3 93T5750CZA-CE6 2GB
Mushkin 99[2/7/4]208F 8GB
Mushkin 99[2/7/4]208F 8GB
内存RAM
A-DATA Technology VDQVE1B16 2GB
A-DATA Technology VDQVE1B16 2GB
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A-DATA Technology DQVE1908 512MB
Kingston ASU21D4U5S8MB-8 8GB
Kingston ASU21D4U5S8MB-8 8GB
内存RAM
Crucial Technology BLS4G4D240FSE.8FBD 4GB
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内存RAM
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内存RAM
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Nanya Technology M2F8G64CB8HC9N-DI 8GB
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Corsair CMW32GX4M2A2666C16 16GB
内存RAM
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Hexon Technology Pte Ltd HEXON 1GB
Corsair CMW16GX4M2C3200C14 8GB
Corsair CMW16GX4M2C3200C14 8GB
内存RAM
Samsung M378B5273CH0-CK0 4GB
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内存RAM
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Crucial Technology BLE8G4D36BEEAK.M8FE1 8GB
内存RAM
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