Samsung M3 93T5750CZA-CE6 2GB vs Patriot Memory (PDP Systems) 4400 C18 Series 8GB

总分

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分

Patriot Memory (PDP Systems) 4400 C18 Series 8GB

Patriot Memory (PDP Systems) 4400 C18 Series 8GB

差异规格评论

差异

Samsung M3 93T5750CZA-CE6 2GB

需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 19.9

测试中的平均数值
更快的写入速度，GB/s

2,622.0 17.1

测试中的平均数值

Patriot Memory (PDP Systems) 4400 C18 Series 8GB

需要考虑的原因
Patriot Memory (PDP Systems) 4400 C18 Series 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 77

左右 -185% 更低的延时
更高的内存带宽，mbps

17000 5300

左右 3.21 更高的带宽

规格

完整的技术规格清单

Samsung M3 93T5750CZA-CE6 2GB

Patriot Memory (PDP Systems) 4400 C18 Series 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 27
读取速度，GB/s

3,405.2 19.9
写入速度，GB/s

2,622.0 17.1
内存带宽，mbps

5300 17000

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 667 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

763 3829

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Samsung M3 78T2863QZS-CF7 1GB

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SK Hynix HMA82GS6CJR8N-XN 16GB

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G Skill Intl F4-4000C16-16GTZR 16GB

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Samsung M4 70T5663QZ3-CF7 2GB

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A-DATA Technology DDR3 1600 4GB

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G Skill Intl F4-3466C16-8GTZ 8GB

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Corsair VS1GB800D2 1GB

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Dust Leopard DDR4-2400 C17 8GB 8GB

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Samsung M471B5273DH0-CH9 4GB

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Micron Technology 18ASF1G72PDZ-2G6E1 8GB

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Samsung M378B5673FH0-CH9 2GB

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Kingston KHX3333C16D4/16GX 16GB

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Kingston 9905403-444.A00LF 4GB

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Crucial Technology CT16G4DFD8213.M16FB 16GB

Crucial Technology CT16G4DFD8213.M16FB 16GB

Samsung M391B5673EH1-CH9 2GB

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Corsair CMR64GX4M8X3800C19 8GB

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Samsung M471B5173BH0-CK0 4GB

Samsung M471B5173BH0-CK0 4GB

Samsung M471B5173CB0-YK0 4GB

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Kingston HP669238-071-HYC 4GB

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Crucial Technology BLE8G4D26AFEA.16FBD 8GB

Crucial Technology BLE8G4D26AFEA.16FBD 8GB