Samsung M3 93T5750CZA-CE6 2GB vs Samsung M378A2K43DB1-CTD 16GB

总分

Samsung M3 93T5750CZA-CE6 2GB

Samsung M3 93T5750CZA-CE6 2GB

总分

Samsung M378A2K43DB1-CTD 16GB

Samsung M378A2K43DB1-CTD 16GB

差异规格评论

差异

Samsung M3 93T5750CZA-CE6 2GB

需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB

报告一个错误

更快的读取速度，GB/s

3 15.3

测试中的平均数值
更快的写入速度，GB/s

2,622.0 11.9

测试中的平均数值

Samsung M378A2K43DB1-CTD 16GB

需要考虑的原因
Samsung M378A2K43DB1-CTD 16GB

报告一个错误

低于PassMark测试中的延时，ns

36 77

左右 -114% 更低的延时
更高的内存带宽，mbps

21300 5300

左右 4.02 更高的带宽

规格

完整的技术规格清单

Samsung M3 93T5750CZA-CE6 2GB

Samsung M378A2K43DB1-CTD 16GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

77 36
读取速度，GB/s

3,405.2 15.3
写入速度，GB/s

2,622.0 11.9
内存带宽，mbps

5300 21300

Other

描述

PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度

5-5-5-15 / 667 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

763 2981

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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最新比较

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Samsung M393B1K70CH0-CH9 8GB

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SK Hynix HMA81GU7AFR8N-UH 8GB

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A-DATA Technology DQVE1908 512MB

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AMD AE34G1601U1 4GB

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Corsair CMD16GX4M4B2133C10 4GB

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Asgard VMA42UH-MEC1U2AJ2 16GB

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Micron Technology 18HTF12872AY-800F1 1GB

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Micron Technology 9ASF1G72PZ-2G6D1 8GB

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Chun Well Technology Holding Limited D4U1636181DC 16GB

Chun Well Technology Holding Limited D4U1636181DC 16GB

Kingston 9905471-071.A00LF 8GB

Kingston 9905471-071.A00LF 8GB

Teikon TMA81GU6AFR8N-UHSC 8GB

Teikon TMA81GU6AFR8N-UHSC 8GB

Samsung M393B2G70BH0-CK0 16GB

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Kingston 9965589-026.D00G 8GB

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SK Hynix HYMP112U64CP8-S5 1GB

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Kingston 9905713-030.A00G 8GB

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Crucial Technology CT51264BD160B.C16F 4GB

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Crucial Technology CT16G4SFD832A.C16FN 16GB

Crucial Technology CT16G4SFD832A.C16FN 16GB