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Samsung M3 93T5750CZA-CE6 2GB
Wilk Elektronik S.A. GR2400D464L17S/4G 4GB
比较
Samsung M3 93T5750CZA-CE6 2GB vs Wilk Elektronik S.A. GR2400D464L17S/4G 4GB
总分
Samsung M3 93T5750CZA-CE6 2GB
总分
Wilk Elektronik S.A. GR2400D464L17S/4G 4GB
差异
规格
评论
差异
需要考虑的原因
Samsung M3 93T5750CZA-CE6 2GB
报告一个错误
更快的读取速度,GB/s
3
17.4
测试中的平均数值
更快的写入速度,GB/s
2,622.0
12.8
测试中的平均数值
需要考虑的原因
Wilk Elektronik S.A. GR2400D464L17S/4G 4GB
报告一个错误
低于PassMark测试中的延时,ns
22
77
左右 -250% 更低的延时
更高的内存带宽,mbps
19200
5300
左右 3.62 更高的带宽
规格
完整的技术规格清单
Samsung M3 93T5750CZA-CE6 2GB
Wilk Elektronik S.A. GR2400D464L17S/4G 4GB
主要特点
存储器类型
DDR2
DDR4
PassMark中的延时,ns
77
22
读取速度,GB/s
3,405.2
17.4
写入速度,GB/s
2,622.0
12.8
内存带宽,mbps
5300
19200
Other
描述
PC2-5300, SSTL 1.8V, CAS Supported: 3 4 5
PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21
时序/时钟速度
5-5-5-15 / 667 MHz
15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)
763
2801
Samsung M3 93T5750CZA-CE6 2GB RAM的比较
takeMS International AG TMS2GB264D082805EQ 2GB
Southland Microsystems 40002105-01 2GB
Wilk Elektronik S.A. GR2400D464L17S/4G 4GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Kingston 99U5403-036.A00G 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
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A-DATA Technology DDR4 2666 8GB
Corsair CML8GX3M2A1600C9 4GB
Crucial Technology CT8G4SFRA32A.C8FE 8GB
G Skill Intl F4-3400C16-8GSXW 8GB
A-DATA Technology AD5U48008G-B 8GB
Samsung M378B5673EH1-CF8 2GB
Kingston KHX2133C13S4/16G 16GB
Kingmax Semiconductor FLFE85F-C8KL9 2GB
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Kingston 9965525-140.A00LF 8GB
G Skill Intl F4-3200C16-16GSXWB 16GB
Team Group Inc. Team-Value-800 2GB
Crucial Technology CT4G4DFS8266.C8FF 4GB
报告一个错误
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Bug description
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