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Samsung M323R2GA3BB0-CQKOD 16GB
Apacer Technology GD2.0927WH.001 8GB

Samsung M323R2GA3BB0-CQKOD 16GB vs Apacer Technology GD2.0927WH.001 8GB

总分
star star star star star
Samsung M323R2GA3BB0-CQKOD 16GB

Samsung M323R2GA3BB0-CQKOD 16GB

总分
star star star star star
Apacer Technology GD2.0927WH.001 8GB

Apacer Technology GD2.0927WH.001 8GB

差异 规格 评论

差异

Samsung M323R2GA3BB0-CQKOD 16GB 需要考虑的原因
Samsung M323R2GA3BB0-CQKOD 16GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    25 left arrow 71
    左右 65% 更低的延时
  • 更快的写入速度，GB/s
    12.1 left arrow 8.0
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 17000
    左右 1.13% 更高的带宽
Apacer Technology GD2.0927WH.001 8GB 需要考虑的原因
Apacer Technology GD2.0927WH.001 8GB
报告一个错误
  • 更快的读取速度，GB/s
    15.4 left arrow 13.4
    测试中的平均数值

规格

完整的技术规格清单
Samsung M323R2GA3BB0-CQKOD 16GB
Apacer Technology GD2.0927WH.001 8GB
主要特点
  • 存储器类型
    DDR5 left arrow DDR4
  • PassMark中的延时，ns
    25 left arrow 71
  • 读取速度，GB/s
    13.4 left arrow 15.4
  • 写入速度，GB/s
    12.1 left arrow 8.0
  • 内存带宽，mbps
    19200 left arrow 17000
Other
  • 描述
    PC5-19200, 1.1V, CAS Supported: 22 26 28 30 32 36 40 42 left arrow PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
  • 时序/时钟速度
    no data / 2400 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    3419 left arrow 1916

Samsung M323R2GA3BB0-CQKOD 16GB RAM的比较

Micron Technology 36ASF2G72PZ-2G1A2 16GB
Corsair CMSX32GX4M2A3200C22 16GB

Apacer Technology GD2.0927WH.001 8GB RAM的比较

Corsair CMK64GX5M2B5200C40 32GB
Apacer Technology AQD-D4U8GN24-SE 8GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

Samsung M323R2GA3BB0-CQKOD 16GB
Samsung M323R2GA3BB0-CQKOD 16GB
Apacer Technology GD2.0927WH.001 8GB
Apacer Technology GD2.0927WH.001 8GB
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Samsung 1600 CL10 Series 8GB
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内存RAM
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内存RAM
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内存RAM
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Kingston 9905678-006.A00G 4GB
内存RAM
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内存RAM
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