Samsung M323R2GA3BB0-CQKOD 16GB vs G Skill Intl F4-3466C18-8GTZRXB 8GB

总分

Samsung M323R2GA3BB0-CQKOD 16GB

Samsung M323R2GA3BB0-CQKOD 16GB

总分

G Skill Intl F4-3466C18-8GTZRXB 8GB

G Skill Intl F4-3466C18-8GTZRXB 8GB

差异规格评论

差异

Samsung M323R2GA3BB0-CQKOD 16GB

需要考虑的原因
Samsung M323R2GA3BB0-CQKOD 16GB

报告一个错误

更高的内存带宽，mbps

19200 17000

左右 1.13% 更高的带宽

G Skill Intl F4-3466C18-8GTZRXB 8GB

需要考虑的原因
G Skill Intl F4-3466C18-8GTZRXB 8GB

报告一个错误

低于PassMark测试中的延时，ns

17 25

左右 -47% 更低的延时
更快的读取速度，GB/s

20.9 13.4

测试中的平均数值
更快的写入速度，GB/s

16.0 12.1

测试中的平均数值

规格

完整的技术规格清单

Samsung M323R2GA3BB0-CQKOD 16GB

G Skill Intl F4-3466C18-8GTZRXB 8GB

主要特点

存储器类型

DDR5 DDR4
PassMark中的延时，ns

25 17
读取速度，GB/s

13.4 20.9
写入速度，GB/s

12.1 16.0
内存带宽，mbps

19200 17000

Other

描述

PC5-19200, 1.1V, CAS Supported: 22 26 28 30 32 36 40 42 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

no data / 2400 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

3419 3550

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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G Skill Intl F4-3466C18-8GTZRXB 8GB

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G Skill Intl F4-3600C18-8GTZR 8GB

Nanya Technology M2Y51264TU88B0B-3C 512MB

Nanya Technology M2Y51264TU88B0B-3C 512MB

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A-DATA Technology AM1P26KC4U1-BACS 4GB

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Micron Technology 18ASF2G72AZ-2G6D1 16GB

Micron Technology 18ASF2G72AZ-2G6D1 16GB

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Kingston ACR256X64D3S1333C9 2GB

Samsung M471B5673FH0-CH9 2GB

Samsung M471B5673FH0-CH9 2GB