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Samsung M378A1G43DB0-CPB 8GB
Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB

Samsung M378A1G43DB0-CPB 8GB vs Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB

总分
star star star star star
Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

总分
star star star star star
Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB

Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB

差异 规格 评论

差异

Samsung M378A1G43DB0-CPB 8GB 需要考虑的原因
Samsung M378A1G43DB0-CPB 8GB
报告一个错误
Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB 需要考虑的原因
Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    24 left arrow 36
    左右 -50% 更低的延时
  • 更快的读取速度，GB/s
    17 left arrow 15
    测试中的平均数值
  • 更快的写入速度，GB/s
    13.5 left arrow 10.3
    测试中的平均数值

规格

完整的技术规格清单
Samsung M378A1G43DB0-CPB 8GB
Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB
主要特点
  • 存储器类型
    DDR4 left arrow DDR4
  • PassMark中的延时，ns
    36 left arrow 24
  • 读取速度，GB/s
    15.0 left arrow 17.0
  • 写入速度，GB/s
    10.3 left arrow 13.5
  • 内存带宽，mbps
    17000 left arrow 17000
Other
  • 描述
    PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 left arrow PC4-17000, 1.2V, CAS Supported: 12 14 15 16
  • 时序/时钟速度
    14-14-14, 15-15-15, 16-16-16 / 2133 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    2569 left arrow 2703

Samsung M378A1G43DB0-CPB 8GB RAM的比较

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB

Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB RAM的比较

Samsung M393B1G70BH0-CK0 8GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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RAM 2

最新比较

Samsung M378A1G43DB0-CPB 8GB
Samsung M378A1G43DB0-CPB 8GB
Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB
Avexir Technologies Corporation DDR4-3600 CL17 4GB 4GB
内存RAM
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMY8GX3M2A2666C10 4GB
Kingston 9965596-035.B00G 4GB
Kingston 9965596-035.B00G 4GB
内存RAM
AMD R5S38G1601U2S 8GB
AMD R5S38G1601U2S 8GB
Kingston 99U5713-002.A00G 4GB
Kingston 99U5713-002.A00G 4GB
内存RAM
SK Hynix HMA451U6AFR8N-TF 4GB
SK Hynix HMA451U6AFR8N-TF 4GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N-VK 8GB
Hynix Semiconductor (Hyundai Electronics) HMA81GS6CJR8N
内存RAM
A-DATA Technology DQVE1908 512MB
A-DATA Technology DQVE1908 512MB
Crucial Technology CT16G4DFRA32A.M16FR 16GB
Crucial Technology CT16G4DFRA32A.M16FR 16GB
内存RAM
Samsung M395T5160QZ4-CE66 2GB
Samsung M395T5160QZ4-CE66 2GB
G Skill Intl F4-2400C17-4GIS 4GB
G Skill Intl F4-2400C17-4GIS 4GB
内存RAM
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Kingston 9905700-097.A00G 8GB
Kingston 9905700-097.A00G 8GB
内存RAM
Crucial Technology CB8GS2400.C8D 8GB
Crucial Technology CB8GS2400.C8D 8GB
Kingston KHX4266C19D4/8GX 8GB
Kingston KHX4266C19D4/8GX 8GB
内存RAM
Samsung M391B5673FH0-CH9 2GB
Samsung M391B5673FH0-CH9 2GB
Crucial Technology BLS16G4S26BFSD.16FD 16GB
Crucial Technology BLS16G4S26BFSD.16FD 16GB
内存RAM
A-DATA Technology AD73I1C1674EV 4GB
A-DATA Technology AD73I1C1674EV 4GB
Corsair CMT32GX4M2C3466C16 16GB
Corsair CMT32GX4M2C3466C16 16GB
内存RAM
Kingston 99U5469-045.A00LF 4GB
Kingston 99U5469-045.A00LF 4GB
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB
Micron Technology MTA8ATF1G64HZ-2G3A1 8GB
内存RAM
SK Hynix HYMP112U64CP8-S5 1GB
SK Hynix HYMP112U64CP8-S5 1GB
Kingston HP26D4S9S8MD-8 8GB
Kingston HP26D4S9S8MD-8 8GB
内存RAM
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Wilk Elektronik S.A. GY1866D364L9A/4G 4GB
Corsair CMD16GX4M2B3200C14 8GB
Corsair CMD16GX4M2B3200C14 8GB
内存RAM
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C-PB 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GU6BFR8C
G Skill Intl F4-3333C16-16GTZB 16GB
G Skill Intl F4-3333C16-16GTZB 16GB
内存RAM