Samsung M378A1G43DB0-CPB 8GB vs Micron Technology 8ATF1G64AZ-2G1B1 8GB

总分

Samsung M378A1G43DB0-CPB 8GB

Samsung M378A1G43DB0-CPB 8GB

总分

Micron Technology 8ATF1G64AZ-2G1B1 8GB

Micron Technology 8ATF1G64AZ-2G1B1 8GB

差异规格评论

差异

Samsung M378A1G43DB0-CPB 8GB

需要考虑的原因
Samsung M378A1G43DB0-CPB 8GB

报告一个错误

Micron Technology 8ATF1G64AZ-2G1B1 8GB

需要考虑的原因
Micron Technology 8ATF1G64AZ-2G1B1 8GB

报告一个错误

低于PassMark测试中的延时，ns

32 36

左右 -13% 更低的延时
更快的读取速度，GB/s

15.5 15

测试中的平均数值
更快的写入速度，GB/s

11.8 10.3

测试中的平均数值

规格

完整的技术规格清单

Samsung M378A1G43DB0-CPB 8GB

Micron Technology 8ATF1G64AZ-2G1B1 8GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

36 32
读取速度，GB/s

15.0 15.5
写入速度，GB/s

10.3 11.8
内存带宽，mbps

17000 17000

Other

描述

PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度

14-14-14, 15-15-15, 16-16-16 / 2133 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2569 2960

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Micron Technology 16ATF1G64AZ-2G1A1 8GB

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Kingston 9965516-430.A00G 16GB

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Corsair CMT64GX4M4C3466C16 16GB

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Kingston KHX2133C11D3/4GX 4GB

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Kingston KF3200C16D4/32GX 32GB

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Micron Technology 9ASF1G72PZ-2G6D1 8GB

Micron Technology 9ASF1G72PZ-2G6D1 8GB