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Samsung M378A1K43EB2-CWE 8GB
Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB
比较
Samsung M378A1K43EB2-CWE 8GB vs Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB
总分
Samsung M378A1K43EB2-CWE 8GB
总分
Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB
差异
规格
评论
差异
需要考虑的原因
Samsung M378A1K43EB2-CWE 8GB
报告一个错误
更快的读取速度,GB/s
17.6
15.9
测试中的平均数值
更快的写入速度,GB/s
12.0
10.7
测试中的平均数值
更高的内存带宽,mbps
25600
21300
左右 1.2% 更高的带宽
需要考虑的原因
Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB
报告一个错误
低于PassMark测试中的延时,ns
30
33
左右 -10% 更低的延时
规格
完整的技术规格清单
Samsung M378A1K43EB2-CWE 8GB
Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB
主要特点
存储器类型
DDR4
DDR4
PassMark中的延时,ns
33
30
读取速度,GB/s
17.6
15.9
写入速度,GB/s
12.0
10.7
内存带宽,mbps
25600
21300
Other
描述
PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24
PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20
时序/时钟速度
20-20-20, 22-22-22, 24-24-24 / 3200 MHz
17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)
2910
2846
Samsung M378A1K43EB2-CWE 8GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Corsair CMSX32GX4M2A3200C22 16GB
Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB RAM的比较
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Essencore Limited KD48GU88C-26N1600 8GB
Corsair CMR64GX4M8C3000C15 8GB
Samsung M378A1K43EB2-CWE 8GB
Thermaltake Technology Co Ltd R002D408GX2-2666C19D 8GB
Kingston 99U5474-010.A00LF 2GB
Kingston 99U5474-012.A00LF 2GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
Samsung M393A2G40EB1-CRC 16GB
A-DATA Technology DQVE1908 512MB
Wilk Elektronik S.A. IR2400D464L15S/8G 8GB
Hynix Semiconductor (Hyundai Electronics) HMT41GS6MFR8A
Kingston 9965604-008.D00G 16GB
A-DATA Technology DOVF1B163G2G 2GB
Patriot Memory (PDP Systems) 2666 C18 Series 16GB
Nanya Technology M2X4G64CB8HG9N-DG 4GB
Avant Technology W641GU42J7240NB 8GB
Samsung M393B1K70QB0-CK0 8GB
Kingston CBD24D4S7D8MB-16 16GB
G Skill Intl F4-3600C18-32GTZR 32GB
Kingston KF3600C17D4/8GX 8GB
Smart Modular SG564568FG8N6KF-Z2 2GB
InnoDisk Corporation M4S0-4GSSNCSJ 4GB
A-DATA Technology DDR2 800G 2GB
Crucial Technology BL16G36C16U4W.M16FE1 16GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO10240
G Skill Intl F4-4133C19-8GTZA 8GB
SK Hynix HYMP112U64CP8-S5 1GB
Corsair CMD16GX4M2B3466C16 8GB
报告一个错误
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Bug description
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