Samsung M378A1K43EB2-CWE 8GB vs Thermaltake Technology Co Ltd R022R432GX2-3600C18A 32GB

总分

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

总分

Thermaltake Technology Co Ltd R022R432GX2-3600C18A 32GB

Thermaltake Technology Co Ltd R022R432GX2-3600C18A 32GB

差异规格评论

差异

Samsung M378A1K43EB2-CWE 8GB

需要考虑的原因
Samsung M378A1K43EB2-CWE 8GB

报告一个错误

更高的内存带宽，mbps

25600 21300

左右 1.2% 更高的带宽

Thermaltake Technology Co Ltd R022R432GX2-3600C18A 32GB

需要考虑的原因
Thermaltake Technology Co Ltd R022R432GX2-3600C18A 32GB

报告一个错误

低于PassMark测试中的延时，ns

31 33

左右 -6% 更低的延时
更快的读取速度，GB/s

19.7 17.6

测试中的平均数值
更快的写入速度，GB/s

17.5 12.0

测试中的平均数值

规格

完整的技术规格清单

Samsung M378A1K43EB2-CWE 8GB

Thermaltake Technology Co Ltd R022R432GX2-3600C18A 32GB

主要特点

存储器类型

DDR4 DDR4
PassMark中的延时，ns

33 31
读取速度，GB/s

17.6 19.7
写入速度，GB/s

12.0 17.5
内存带宽，mbps

25600 21300

Other

描述

PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 24 PC4-21300, 1.2V, CAS Supported: 13 14 15 16 17 18 19 20 21 22
时序/时钟速度

20-20-20, 22-22-22, 24-24-24 / 3200 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2910 3935

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M378A1K43EB2-CWE 8GB

Samsung M378A1K43EB2-CWE 8GB

Thermaltake Technology Co Ltd R022R432GX2-3600C18A 32GB

Thermaltake Technology Co Ltd R022R432GX2-3600C18A 32GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

Ramaxel Technology RMSA3340MB88HBF-3200 16GB

Ramaxel Technology RMSA3340MB88HBF-3200 16GB

Kingston 2GB-DDR2 800Mhz 2GB

Kingston 2GB-DDR2 800Mhz 2GB

Corsair CMD64GX4M8A2666C15 8GB

Corsair CMD64GX4M8A2666C15 8GB

Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology BL8G26C16U4B.8FE 8GB

Crucial Technology BL8G26C16U4B.8FE 8GB

Kingston KVR800D2N6/2G 2GB

Kingston KVR800D2N6/2G 2GB

Kingmax Semiconductor GSLF62F-D8---------- 4GB

Kingmax Semiconductor GSLF62F-D8---------- 4GB

Kingston 9965525-140.A00LF 8GB

Kingston 9965525-140.A00LF 8GB

G Skill Intl F4-3600C16-8GTZSW 8GB

G Skill Intl F4-3600C16-8GTZSW 8GB

Kingston 9905403-444.A00LF 4GB

Kingston 9905403-444.A00LF 4GB

G Skill Intl F4-3300C16-16GTZKW 16GB

G Skill Intl F4-3300C16-16GTZKW 16GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Nanya Technology M2N1G64TUH8D5F-AC 1GB

Essencore Limited KD4AGU880-32A160T 16GB

Essencore Limited KD4AGU880-32A160T 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

G Skill Intl F4-2133C15-8GVK 8GB

G Skill Intl F4-2133C15-8GVK 8GB

SK Hynix HMT325U6CFR8C-PB 2GB

SK Hynix HMT325U6CFR8C-PB 2GB

OCZ OCZ3G1600LV2G 2GB

OCZ OCZ3G1600LV2G 2GB

A-DATA Technology AD73I1C1674EV 4GB

A-DATA Technology AD73I1C1674EV 4GB

Patriot Memory (PDP Systems) 3000 C16 Series 4GB

Patriot Memory (PDP Systems) 3000 C16 Series 4GB

Samsung M393B5170FH0-CK0 4GB

Samsung M393B5170FH0-CK0 4GB

Apacer Technology GD2.1527WH.002 8GB

Apacer Technology GD2.1527WH.002 8GB

Apacer Technology 78.01G86.9H50C 1GB

Apacer Technology 78.01G86.9H50C 1GB

Kingston KHX2133C14D4/8G 8GB

Kingston KHX2133C14D4/8G 8GB

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

Crucial Technology CT8G4DFS8213.C8FBR1 8GB

Crucial Technology CT8G4DFS8213.C8FBR1 8GB