Samsung M378B5173EB0-CK0 4GB vs Micron Technology 16ATF4G64HZ-2G6B2 32GB

总分

Samsung M378B5173EB0-CK0 4GB

Samsung M378B5173EB0-CK0 4GB

总分

Micron Technology 16ATF4G64HZ-2G6B2 32GB

Micron Technology 16ATF4G64HZ-2G6B2 32GB

差异规格评论

差异

Samsung M378B5173EB0-CK0 4GB

需要考虑的原因
Samsung M378B5173EB0-CK0 4GB

报告一个错误

Micron Technology 16ATF4G64HZ-2G6B2 32GB

需要考虑的原因
Micron Technology 16ATF4G64HZ-2G6B2 32GB

报告一个错误

低于PassMark测试中的延时，ns

35 42

左右 -20% 更低的延时
更快的读取速度，GB/s

15.4 13.9

测试中的平均数值
更快的写入速度，GB/s

11.8 8.1

测试中的平均数值
更高的内存带宽，mbps

21300 12800

左右 1.66 更高的带宽

规格

完整的技术规格清单

Samsung M378B5173EB0-CK0 4GB

Micron Technology 16ATF4G64HZ-2G6B2 32GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

42 35
读取速度，GB/s

13.9 15.4
写入速度，GB/s

8.1 11.8
内存带宽，mbps

12800 21300

Other

描述

PC3-12800, 1.5V, CAS Supported: 6 7 8 9 10 11 PC4-21300, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22 23
时序/时钟速度

9-9-9-24 / 1600 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2150 2926

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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PNY Electronics PNY 2GB

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SK Hynix HMT31GR7CFR4C-PB 8GB

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Corsair CMW32GX4M4K3733C17 8GB

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