Samsung M378B5273CH0-CH9 4GB vs Samsung M393B5170FH0-YH9 4GB

总分

Samsung M378B5273CH0-CH9 4GB

Samsung M378B5273CH0-CH9 4GB

总分

Samsung M393B5170FH0-YH9 4GB

Samsung M393B5170FH0-YH9 4GB

差异规格评论

差异

Samsung M378B5273CH0-CH9 4GB

需要考虑的原因
Samsung M378B5273CH0-CH9 4GB

报告一个错误

低于PassMark测试中的延时，ns

37 54

左右 31% 更低的延时
更快的读取速度，GB/s

13.2 9.2

测试中的平均数值
更快的写入速度，GB/s

8.4 7.5

测试中的平均数值

Samsung M393B5170FH0-YH9 4GB

需要考虑的原因
Samsung M393B5170FH0-YH9 4GB

报告一个错误

规格

完整的技术规格清单

Samsung M378B5273CH0-CH9 4GB

Samsung M393B5170FH0-YH9 4GB

主要特点

存储器类型

DDR3 DDR3
PassMark中的延时，ns

37 54
读取速度，GB/s

13.2 9.2
写入速度，GB/s

8.4 7.5
内存带宽，mbps

10600 10600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC3-10600, 1.5V, 1.35V , CAS Supported: 6 7 8 9
时序/时钟速度

7-7-7-20 / 1333 MHz 7-7-7-20 / 1333 MHz
排名PassMark (越多越好)

2143 1990

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Kingston ACR256X64D3S1333C9 2GB

Kingston ACR256X64D3S1333C9 2GB

Crucial Technology BLT16G4D30AETA.K16FB 16GB

Crucial Technology BLT16G4D30AETA.K16FB 16GB

SK Hynix DDR2 800 2G 2GB

SK Hynix DDR2 800 2G 2GB

Crucial Technology CT8G4SFS824A.M8FH 8GB

Crucial Technology CT8G4SFS824A.M8FH 8GB

A-DATA Technology DQVE1908 512MB

A-DATA Technology DQVE1908 512MB

Corsair CMWX8GF2933Z16W4 8GB

Corsair CMWX8GF2933Z16W4 8GB

Samsung M471B5273EB0-CK0 4GB

Samsung M471B5273EB0-CK0 4GB

SK Hynix HMA81GS6CJR8N-UH 8GB

SK Hynix HMA81GS6CJR8N-UH 8GB

Kingston KP223C-ELD 2GB

Kingston KP223C-ELD 2GB

G Skill Intl F4-3600C17-8GVK 8GB

G Skill Intl F4-3600C17-8GVK 8GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Corsair CMK8GX4M2B3866C18 4GB

Corsair CMK8GX4M2B3866C18 4GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

Crucial Technology CT8G4DFS6266.M4FB 8GB

Crucial Technology CT8G4DFS6266.M4FB 8GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Crucial Technology CT8G4DFS832A.C8FE 8GB

Crucial Technology CT8G4DFS832A.C8FE 8GB

Crucial Technology CT51264BD160B.C16F 4GB

Crucial Technology CT51264BD160B.C16F 4GB

Micron Technology 4ATF51264HZ-2G6E1 4GB

Micron Technology 4ATF51264HZ-2G6E1 4GB

Samsung M471B5173QH0-YK0 4GB

Samsung M471B5173QH0-YK0 4GB

Crucial Technology BLS8G4S240FSD.16FBD2 8GB

Crucial Technology BLS8G4S240FSD.16FBD2 8GB

PUSKILL DDR3 1600 8G 8GB

PUSKILL DDR3 1600 8G 8GB

G Skill Intl F4-2400C15-8GRR 8GB

G Skill Intl F4-2400C15-8GRR 8GB

Samsung 1600 CL10 Series 8GB

Samsung 1600 CL10 Series 8GB

Crucial Technology CT8G4DFD824A.C16FBD1 8GB

Crucial Technology CT8G4DFD824A.C16FBD1 8GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB

G Skill Intl F4-2133C15-8GVK 8GB

G Skill Intl F4-2133C15-8GVK 8GB

SK Hynix CT51264AC800.C16FC 4GB

SK Hynix CT51264AC800.C16FC 4GB

G Skill Intl F4-3600C17-16GTZ 16GB

G Skill Intl F4-3600C17-16GTZ 16GB