Samsung M378B5273DH0-CH9 4GB vs Crucial Technology BLS8G4D26BFSB.16FD2 8GB

总分

Samsung M378B5273DH0-CH9 4GB

Samsung M378B5273DH0-CH9 4GB

总分

Crucial Technology BLS8G4D26BFSB.16FD2 8GB

Crucial Technology BLS8G4D26BFSB.16FD2 8GB

差异规格评论

差异

Samsung M378B5273DH0-CH9 4GB

需要考虑的原因
Samsung M378B5273DH0-CH9 4GB

报告一个错误

Crucial Technology BLS8G4D26BFSB.16FD2 8GB

需要考虑的原因
Crucial Technology BLS8G4D26BFSB.16FD2 8GB

报告一个错误

低于PassMark测试中的延时，ns

28 41

左右 -46% 更低的延时
更快的读取速度，GB/s

18.2 13.3

测试中的平均数值
更快的写入速度，GB/s

14.2 8.3

测试中的平均数值
更高的内存带宽，mbps

21300 10600

左右 2.01 更高的带宽

规格

完整的技术规格清单

Samsung M378B5273DH0-CH9 4GB

Crucial Technology BLS8G4D26BFSB.16FD2 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

41 28
读取速度，GB/s

13.3 18.2
写入速度，GB/s

8.3 14.2
内存带宽，mbps

10600 21300

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-21300, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 18 20
时序/时钟速度

7-7-7-20 / 1333 MHz 17-17-17, 18-18-18, 19-19-19, 20-20-20 / 2666 MHz
排名PassMark (越多越好)

2176 3300

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

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RAM 2

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SK Hynix HMT325U6BFR8C-H9 2GB

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Corsair CM3X8GA2400C11Y2R 8GB

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Kingston 9905678-102.A00G 8GB

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Samsung M393B5270CH0-CH9 4GB

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Micron Technology 4ATF1G64AZ-3G2E1 8GB

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AMD R534G1601U1S-UO 4GB

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Avexir Technologies Corporation DDR4-2400 4GB CL16 4GB

G Skill Intl F2-8500CL5-2GBPI 2GB

G Skill Intl F2-8500CL5-2GBPI 2GB

Ramaxel Technology RMUA5110MD78HAF-2666 8GB

Ramaxel Technology RMUA5110MD78HAF-2666 8GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT4G4SFS824A.M8FE 4GB

Crucial Technology CT4G4SFS824A.M8FE 4GB

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Kingston 9905471-002.A00LF 2GB

Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB

Avexir Technologies Corporation DDR4-3000 CL16 4GB 4GB