Samsung M378B5673EH1-CF8 2GB vs Avant Technology W642GU42J5213N2 16GB

总分

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

总分

Avant Technology W642GU42J5213N2 16GB

Avant Technology W642GU42J5213N2 16GB

差异规格评论

差异

Samsung M378B5673EH1-CF8 2GB

需要考虑的原因
Samsung M378B5673EH1-CF8 2GB

报告一个错误

Avant Technology W642GU42J5213N2 16GB

需要考虑的原因
Avant Technology W642GU42J5213N2 16GB

报告一个错误

低于PassMark测试中的延时，ns

25 28

左右 -12% 更低的延时
更快的读取速度，GB/s

16.2 12.7

测试中的平均数值
更快的写入速度，GB/s

11.9 7.5

测试中的平均数值
更高的内存带宽，mbps

17000 8500

左右 2 更高的带宽

规格

完整的技术规格清单

Samsung M378B5673EH1-CF8 2GB

Avant Technology W642GU42J5213N2 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 25
读取速度，GB/s

12.7 16.2
写入速度，GB/s

7.5 11.9
内存带宽，mbps

8500 17000

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-17000, 1.2V, CAS Supported: 9 11 12 13 14 15 16
时序/时钟速度

7-7-7-20 / 1066 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

1988 2909

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Unifosa Corporation HU564404EP0200 4GB

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G Skill Intl F4-3200C16-8GTRG 8GB

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G Skill Intl F3-14900CL8-4GBXM 4GB

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G Skill Intl F4-2400C16-8GIS 8GB

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G Skill Intl F5-6400J3239G16G 16GB

JUHOR JHD3000U1908JG 8GB

JUHOR JHD3000U1908JG 8GB

Ramaxel Technology RMT3160ED58E9W1600 4GB

Ramaxel Technology RMT3160ED58E9W1600 4GB

Samsung M471A1K43BB0-CPB 8GB

Samsung M471A1K43BB0-CPB 8GB

Kingston 99U5469-045.A00LF 4GB

Kingston 99U5469-045.A00LF 4GB

Crucial Technology BL8G32C16U4R.M8FE1 8GB

Crucial Technology BL8G32C16U4R.M8FE1 8GB

Hexon Technology Pte Ltd HEXON 1GB

Hexon Technology Pte Ltd HEXON 1GB

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Crucial Technology CT16G4SFS832A.C8FE 16GB