Samsung M378B5673EH1-CF8 2GB vs Crucial Technology B|B8G4D30BET4K.C8FD 8GB

总分

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

总分

Crucial Technology B|B8G4D30BET4K.C8FD 8GB

Crucial Technology B|B8G4D30BET4K.C8FD 8GB

差异规格评论

差异

Samsung M378B5673EH1-CF8 2GB

需要考虑的原因
Samsung M378B5673EH1-CF8 2GB

报告一个错误

低于PassMark测试中的延时，ns

28 77

左右 64% 更低的延时
更快的读取速度，GB/s

12.7 11.9

测试中的平均数值
更快的写入速度，GB/s

7.5 6.9

测试中的平均数值

Crucial Technology B|B8G4D30BET4K.C8FD 8GB

需要考虑的原因
Crucial Technology B|B8G4D30BET4K.C8FD 8GB

报告一个错误

更高的内存带宽，mbps

19200 8500

左右 2.26 更高的带宽

规格

完整的技术规格清单

Samsung M378B5673EH1-CF8 2GB

Crucial Technology B|B8G4D30BET4K.C8FD 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

28 77
读取速度，GB/s

12.7 11.9
写入速度，GB/s

7.5 6.9
内存带宽，mbps

8500 19200

Other

描述

PC3-8500, 1.5V, CAS Supported: 6 7 8 PC4-19200, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24
时序/时钟速度

7-7-7-20 / 1066 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

1988 1517

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

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RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology CT8G4DFS832A.M8FR 8GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

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Kingston KHX1600C9S3L/4G 4GB

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Crucial Technology BLS8G4D240FSA.M16FAD 8GB

SK Hynix HYMP112U64CP8-S5 1GB

SK Hynix HYMP112U64CP8-S5 1GB

Crucial Technology BLS4G4D26BFSB.8FE 4GB

Crucial Technology BLS4G4D26BFSB.8FE 4GB

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A-DATA Technology AM2L16BC4R1-B0CS 4GB

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Corsair CMR64GX4M8X3800C19 8GB

Samsung M393B2G70BH0-CH9 16GB

Samsung M393B2G70BH0-CH9 16GB

Crucial Technology CT8G4SFRA32A.M8FJ 8GB

Crucial Technology CT8G4SFRA32A.M8FJ 8GB