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Samsung M378B5673EH1-CF8 2GB
Crucial Technology CT4G4DFS8213.C8FADP 4GB

Samsung M378B5673EH1-CF8 2GB vs Crucial Technology CT4G4DFS8213.C8FADP 4GB

总分
star star star star star
Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

总分
star star star star star
Crucial Technology CT4G4DFS8213.C8FADP 4GB

Crucial Technology CT4G4DFS8213.C8FADP 4GB

差异 规格 评论

差异

Samsung M378B5673EH1-CF8 2GB 需要考虑的原因
Samsung M378B5673EH1-CF8 2GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    28 left arrow 32
    左右 13% 更低的延时
Crucial Technology CT4G4DFS8213.C8FADP 4GB 需要考虑的原因
Crucial Technology CT4G4DFS8213.C8FADP 4GB
报告一个错误
  • 更快的读取速度，GB/s
    14.5 left arrow 12.7
    测试中的平均数值
  • 更快的写入速度，GB/s
    10.8 left arrow 7.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    17000 left arrow 8500
    左右 2 更高的带宽

规格

完整的技术规格清单
Samsung M378B5673EH1-CF8 2GB
Crucial Technology CT4G4DFS8213.C8FADP 4GB
主要特点
  • 存储器类型
    DDR3 left arrow DDR4
  • PassMark中的延时，ns
    28 left arrow 32
  • 读取速度，GB/s
    12.7 left arrow 14.5
  • 写入速度，GB/s
    7.5 left arrow 10.8
  • 内存带宽，mbps
    8500 left arrow 17000
Other
  • 描述
    PC3-8500, 1.5V, CAS Supported: 6 7 8 left arrow PC4-17000, 1.2V, CAS Supported: 9 10 11 12 13 14 15 16 17 18 19
  • 时序/时钟速度
    7-7-7-20 / 1066 MHz left arrow 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
  • 排名PassMark (越多越好)
    1988 left arrow 2399

Samsung M378B5673EH1-CF8 2GB RAM的比较

Nanya Technology M2X4G64CB8HG5N-DG 4GB
Kingston 9905403-831.A00LF 8GB

Crucial Technology CT4G4DFS8213.C8FADP 4GB RAM的比较

Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
Hynix Semiconductor (Hyundai Electronics) GKE160SO102408-2400 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
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最新比较

Samsung M378B5673EH1-CF8 2GB
Samsung M378B5673EH1-CF8 2GB
Crucial Technology CT4G4DFS8213.C8FADP 4GB
Crucial Technology CT4G4DFS8213.C8FADP 4GB
内存RAM
SK Hynix HMT351S6CFR8C-PB 4GB
SK Hynix HMT351S6CFR8C-PB 4GB
Kingston HX432C15PB3/16G 16GB
Kingston HX432C15PB3/16G 16GB
内存RAM
Samsung M471A5244CB0-CWE 4GB
Samsung M471A5244CB0-CWE 4GB
Galaxy Microsystems Ltd. GOC2017-Fugger 8GB
Galaxy Microsystems Ltd. GOC2017-Fugger 8GB
内存RAM
SK Hynix HMT31GR7CFR4C-PB 8GB
SK Hynix HMT31GR7CFR4C-PB 8GB
G Skill Intl F4-3733C17-4GTZ 4GB
G Skill Intl F4-3733C17-4GTZ 4GB
内存RAM
Kingston 99U5403-036.A00G 4GB
Kingston 99U5403-036.A00G 4GB
Crucial Technology BL16G30C15U4WL.M16FE 16GB
Crucial Technology BL16G30C15U4WL.M16FE 16GB
内存RAM
Kingston 9905403-437.A01LF 4GB
Kingston 9905403-437.A01LF 4GB
G Skill Intl F4-4000C16-16GTRS 16GB
G Skill Intl F4-4000C16-16GTRS 16GB
内存RAM
Qimonda 64T128020EDL2.5C2 1GB
Qimonda 64T128020EDL2.5C2 1GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N-UH 8GB
Hynix Semiconductor (Hyundai Electronics) HMA41GR7AFR4N
内存RAM
Corsair CML8GX3M2A1600C9 4GB
Corsair CML8GX3M2A1600C9 4GB
Corsair CMU32GX4M2C3200C16 16GB
Corsair CMU32GX4M2C3200C16 16GB
内存RAM
SK Hynix HMT451U7BFR8C-RD 4GB
SK Hynix HMT451U7BFR8C-RD 4GB
Chun Well Technology Holding Limited D4U0836181B 8GB
Chun Well Technology Holding Limited D4U0836181B 8GB
内存RAM
Samsung M378B5273CH0-CH9 4GB
Samsung M378B5273CH0-CH9 4GB
Kingston CBD26D4U9S8MH-8 8GB
Kingston CBD26D4U9S8MH-8 8GB
内存RAM
Corsair CMY8GX3M2A2666C10 4GB
Corsair CMY8GX3M2A2666C10 4GB
Transcend Information TS512MLH64V4H 4GB
Transcend Information TS512MLH64V4H 4GB
内存RAM
Kingston 9905403-444.A00LF 4GB
Kingston 9905403-444.A00LF 4GB
Kingston KHX3200C16D4/32GX 32GB
Kingston KHX3200C16D4/32GX 32GB
内存RAM
G Skill Intl F2-8500CL5-2GBPI 2GB
G Skill Intl F2-8500CL5-2GBPI 2GB
Corsair CM4B4G1J2400A14K 4GB
Corsair CM4B4G1J2400A14K 4GB
内存RAM
Crucial Technology CT51264BA1339.C16F 4GB
Crucial Technology CT51264BA1339.C16F 4GB
G Skill Intl F4-4000C18-8GTRS 8GB
G Skill Intl F4-4000C18-8GTRS 8GB
内存RAM