Samsung M378B5673FH0-CH9 2GB vs Chun Well Technology Holding Limited CL18-20-20 D4-3600 8GB

总分

Samsung M378B5673FH0-CH9 2GB

Samsung M378B5673FH0-CH9 2GB

总分

Chun Well Technology Holding Limited CL18-20-20 D4-3600 8GB

Chun Well Technology Holding Limited CL18-20-20 D4-3600 8GB

差异规格评论

差异

Samsung M378B5673FH0-CH9 2GB

需要考虑的原因
Samsung M378B5673FH0-CH9 2GB

报告一个错误

Chun Well Technology Holding Limited CL18-20-20 D4-3600 8GB

需要考虑的原因
Chun Well Technology Holding Limited CL18-20-20 D4-3600 8GB

报告一个错误

低于PassMark测试中的延时，ns

27 35

左右 -30% 更低的延时
更快的读取速度，GB/s

19.1 14.4

测试中的平均数值
更快的写入速度，GB/s

16.2 9.5

测试中的平均数值
更高的内存带宽，mbps

17000 10600

左右 1.6 更高的带宽

规格

完整的技术规格清单

Samsung M378B5673FH0-CH9 2GB

Chun Well Technology Holding Limited CL18-20-20 D4-3600 8GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

35 27
读取速度，GB/s

14.4 19.1
写入速度，GB/s

9.5 16.2
内存带宽，mbps

10600 17000

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-17000, 1.2V, CAS Supported: 14 15 16
时序/时钟速度

7-7-7-20 / 1333 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

2321 3784

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

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Crucial Technology BL32G32C16U4B.M16FB1 32GB

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SK Hynix HMT151R7TFR4C-H9 4GB

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Kingston 9965589-008.D02G 8GB

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Team Group Inc. TEAMGROUP-D4-3733 8GB

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Kingston 9905469-143.A00LF 4GB

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Gold Key Technology Co Ltd NMSO432F82-3200E 32GB

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Super Talent F24UB16GV 16GB

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Transcend Information TS2GSH64V4B 16GB

A-DATA Technology AM2L16BC4R1-B0CS 4GB

A-DATA Technology AM2L16BC4R1-B0CS 4GB

Corsair CMK16GX4M2K4500C19 8GB

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Corsair CMK64GX4M2A2400C16 32GB

Corsair CMK64GX4M2A2400C16 32GB