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Samsung M378B5673FH0-CH9 2GB
Micron Technology 36ASF2G72PZ-2G1A2 16GB
比较
Samsung M378B5673FH0-CH9 2GB vs Micron Technology 36ASF2G72PZ-2G1A2 16GB
总分
Samsung M378B5673FH0-CH9 2GB
总分
Micron Technology 36ASF2G72PZ-2G1A2 16GB
差异
规格
评论
差异
需要考虑的原因
Samsung M378B5673FH0-CH9 2GB
报告一个错误
低于PassMark测试中的延时,ns
35
52
左右 33% 更低的延时
更快的读取速度,GB/s
14.4
10.2
测试中的平均数值
更快的写入速度,GB/s
9.5
8.2
测试中的平均数值
需要考虑的原因
Micron Technology 36ASF2G72PZ-2G1A2 16GB
报告一个错误
更高的内存带宽,mbps
17500
10600
左右 1.65 更高的带宽
规格
完整的技术规格清单
Samsung M378B5673FH0-CH9 2GB
Micron Technology 36ASF2G72PZ-2G1A2 16GB
主要特点
存储器类型
DDR3
DDR4
PassMark中的延时,ns
35
52
读取速度,GB/s
14.4
10.2
写入速度,GB/s
9.5
8.2
内存带宽,mbps
10600
17500
Other
描述
PC3-10600, 1.5V, CAS Supported: 6 7 8 9
PC4-17500, 1.2V, CAS Supported: 9 11 12 13 14 15 16 18 19
时序/时钟速度
7-7-7-20 / 1333 MHz
no data
排名PassMark (越多越好)
2321
2319
Samsung M378B5673FH0-CH9 2GB RAM的比较
Samsung M378B5773CH0-CH9 2GB
Samsung M378B5773DH0-CH9 2GB
Micron Technology 36ASF2G72PZ-2G1A2 16GB RAM的比较
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
Crucial Technology BLS4G4D240FSE.8FBD 4GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
RAM 2
CAS Latency (CL) *
Frequency (Mhz) *
calculate
Absolute Latency
0 ns
最新比较
Corsair CMSO4GX3M1C1600C11 4GB
Hewlett-Packard 7EH61AA# 8GB
Avant Technology F6451U64F9333G 4GB
Samsung M471A2K43CB1-CRCR 16GB
Samsung M471B5273DH0-CH9 4GB
Kingston 9905701-021.A00G 16GB
Lexar Co Limited LD4AU016G-H3200GST 16GB
G Skill Intl F4-2400C15-4GNT 4GB
Kingston ACR256X64D3S1333C9 2GB
Crucial Technology CT16G4SFD832A.M16FJ 16GB
Samsung M471A5244CB0-CWE 4GB
Kingston 16ATF2G64AZ-2G1B1 8GB
Kingston 99U5428-046.A00LF 4GB
Corsair CMT64GX4M8X3600C18 8GB
Apacer Technology 78.C1GET.9K10C 8GB
SK Hynix HMA82GU6DJR8N-VK 16GB
Elpida EBJ40EG8BFWB-JS-F 4GB
Panram International Corporation PUD42400C154GNJW 4GB
Patriot Memory (PDP Systems) 1866 CL9 Series 4GB
Crucial Technology CT8G4SFS824A.C8FHD1 8GB
Apacer Technology 78.C1GET.9K10C 8GB
A-DATA Technology DDR4 4133 2OZ 8GB
Kingmax Semiconductor FLGF65F-C8KJ9A 4GB
INTENSO M418039 8GB
Nanya Technology M2F8G64CB8HC9N-DI 8GB
Patriot Memory (PDP Systems) 3600 C14 Series 8GB
Samsung M4 70T5663CZ3-CE6 2GB
Corsair CM4X4GF2400C16S2 4GB
报告一个错误
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Bug description
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