Samsung M378B5773DH0-CH9 2GB vs Chun Well Technology Holding Limited CL18-20-20 D4-3200 16GB

总分

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

总分

Chun Well Technology Holding Limited CL18-20-20 D4-3200 16GB

Chun Well Technology Holding Limited CL18-20-20 D4-3200 16GB

差异规格评论

差异

Samsung M378B5773DH0-CH9 2GB

需要考虑的原因
Samsung M378B5773DH0-CH9 2GB

报告一个错误

Chun Well Technology Holding Limited CL18-20-20 D4-3200 16GB

需要考虑的原因
Chun Well Technology Holding Limited CL18-20-20 D4-3200 16GB

报告一个错误

低于PassMark测试中的延时，ns

37 39

左右 -5% 更低的延时
更快的读取速度，GB/s

16.9 11.7

测试中的平均数值
更快的写入速度，GB/s

13.8 7.2

测试中的平均数值
更高的内存带宽，mbps

25600 10600

左右 2.42 更高的带宽

规格

完整的技术规格清单

Samsung M378B5773DH0-CH9 2GB

Chun Well Technology Holding Limited CL18-20-20 D4-3200 16GB

主要特点

存储器类型

DDR3 DDR4
PassMark中的延时，ns

39 37
读取速度，GB/s

11.7 16.9
写入速度，GB/s

7.2 13.8
内存带宽，mbps

10600 25600

Other

描述

PC3-10600, 1.5V, CAS Supported: 6 7 8 9 PC4-25600, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18 19 20 21 22
时序/时钟速度

7-7-7-20 / 1333 MHz 20-20-20, 22-22-22, 24-24-24 / 3200 MHz
排名PassMark (越多越好)

1749 3170

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

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Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M378B5773DH0-CH9 2GB

Samsung M378B5773DH0-CH9 2GB

Chun Well Technology Holding Limited CL18-20-20 D4-3200 16GB

Chun Well Technology Holding Limited CL18-20-20 D4-3200

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Crucial Technology BLS16G4S240FSD.16FD 16GB

Crucial Technology BLS16G4S240FSD.16FD 16GB

Kingston 9905403-090.A01LF 4GB

Kingston 9905403-090.A01LF 4GB

Micron Technology 4ATF1G64AZ-3G2E1 8GB

Micron Technology 4ATF1G64AZ-3G2E1 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Crucial Technology CT8G4DFS824A.C8FJ 8GB

Crucial Technology CT8G4DFS824A.C8FJ 8GB

Crucial Technology CT25664BA160B.C16F 2GB

Crucial Technology CT25664BA160B.C16F 2GB

Galaxy Microsystems Ltd. GALAX GOC 2016 8GB

Galaxy Microsystems Ltd. GALAX GOC 2016 8GB

TwinMOS 8DPT5MK8-TATP 2GB

TwinMOS 8DPT5MK8-TATP 2GB

Kingston 9965604-008.D00G 16GB

Kingston 9965604-008.D00G 16GB

Crucial Technology CT51264BD1339.M16F 4GB

Crucial Technology CT51264BD1339.M16F 4GB

G Skill Intl F4-3200C16-4GRKD 4GB

G Skill Intl F4-3200C16-4GRKD 4GB

Micron Technology 18HTF12872AY-800F1 1GB

Micron Technology 18HTF12872AY-800F1 1GB

Corsair CMW32GX4M4Z2933C16 8GB

Corsair CMW32GX4M4Z2933C16 8GB

Nanya Technology NT2GC64B8HC0NS-CG 2GB

Nanya Technology NT2GC64B8HC0NS-CG 2GB

G Skill Intl F4-3200C16-8GTZKW 8GB

G Skill Intl F4-3200C16-8GTZKW 8GB

AMD AE34G1601U1 4GB

AMD AE34G1601U1 4GB

Hyundai Inc AR32C16S8K2HU416R 8GB

Hyundai Inc AR32C16S8K2HU416R 8GB

Avant Technology F641GU67F9333G 8GB

Avant Technology F641GU67F9333G 8GB

Crucial Technology BLS4G4D240FSC.8FBD 4GB

Crucial Technology BLS4G4D240FSC.8FBD 4GB

Kingston KHX1600C9D3/8G 8GB

Kingston KHX1600C9D3/8G 8GB

Kingston CBD24D4S7S8MB-8 8GB

Kingston CBD24D4S7S8MB-8 8GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

Micron Technology 16JTF25664AZ-1G4F1 2GB

Essencore Limited KD48GU880-36A180Z 8GB

Essencore Limited KD48GU880-36A180Z 8GB

Kingston 99U5584-004.A00LF 4GB

Kingston 99U5584-004.A00LF 4GB

Shenzen Recadata Storage Technology 8GB

Shenzen Recadata Storage Technology 8GB