Samsung M378T5663QZ3-CF7 2GB vs AMD R748G2400S2S 8GB

总分

Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

总分

AMD R748G2400S2S 8GB

AMD R748G2400S2S 8GB

差异规格评论

差异

Samsung M378T5663QZ3-CF7 2GB

需要考虑的原因
Samsung M378T5663QZ3-CF7 2GB

报告一个错误

低于PassMark测试中的延时，ns

56 135

左右 59% 更低的延时
更快的读取速度，GB/s

4 15.2

测试中的平均数值

AMD R748G2400S2S 8GB

需要考虑的原因
AMD R748G2400S2S 8GB

报告一个错误

更快的写入速度，GB/s

8.2 1,813.5

测试中的平均数值
更高的内存带宽，mbps

19200 6400

左右 3 更高的带宽

规格

完整的技术规格清单

Samsung M378T5663QZ3-CF7 2GB

AMD R748G2400S2S 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

56 135
读取速度，GB/s

4,387.7 15.2
写入速度，GB/s

1,813.5 8.2
内存带宽，mbps

6400 19200

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
时序/时钟速度

5-5-5-15 / 800 MHz 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
排名PassMark (越多越好)

693 1359

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

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Kingston HP37D4U1S8ME-16XR 16GB

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Nanya Technology NT8GA64D88CX3S-JR 8GB

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A-DATA Technology DQKD1A08 1GB

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PNY Electronics PNY 2GB

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G Skill Intl F4-4000C15-8GTZR 8GB

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G Skill Intl F4-2400C15-8GRR 8GB

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Samsung DDR3 8GB 1600MHz 8GB

Samsung DDR3 8GB 1600MHz 8GB

Gloway International (HK) STK2400C15-16GB 16GB

Gloway International (HK) STK2400C15-16GB 16GB

A-DATA Technology DOVF1B163G2G 2GB

A-DATA Technology DOVF1B163G2G 2GB

Kingston 9905734-018.A00G 16GB

Kingston 9905734-018.A00G 16GB

Kingston 9965525-155.A00LF 8GB

Kingston 9965525-155.A00LF 8GB

G Skill Intl F4-3200C14-8GTZSK 8GB

G Skill Intl F4-3200C14-8GTZSK 8GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Golden Empire 1GB DDR2 800 CAS=4 1GB

Apacer Technology 78.B1GS6.AUC0B 4GB

Apacer Technology 78.B1GS6.AUC0B 4GB