Samsung M378T5663QZ3-CF7 2GB vs G Skill Intl F4-3466C16-8GTZ 8GB

总分

Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

总分

G Skill Intl F4-3466C16-8GTZ 8GB

G Skill Intl F4-3466C16-8GTZ 8GB

差异规格评论

差异

Samsung M378T5663QZ3-CF7 2GB

需要考虑的原因
Samsung M378T5663QZ3-CF7 2GB

报告一个错误

更快的读取速度，GB/s

4 19.2

测试中的平均数值

G Skill Intl F4-3466C16-8GTZ 8GB

需要考虑的原因
G Skill Intl F4-3466C16-8GTZ 8GB

报告一个错误

低于PassMark测试中的延时，ns

20 56

左右 -180% 更低的延时
更快的写入速度，GB/s

15.3 1,813.5

测试中的平均数值
更高的内存带宽，mbps

17000 6400

左右 2.66 更高的带宽

规格

完整的技术规格清单

Samsung M378T5663QZ3-CF7 2GB

G Skill Intl F4-3466C16-8GTZ 8GB

主要特点

存储器类型

DDR2 DDR4
PassMark中的延时，ns

56 20
读取速度，GB/s

4,387.7 19.2
写入速度，GB/s

1,813.5 15.3
内存带宽，mbps

6400 17000

Other

描述

PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 PC4-17000, 1.2V, CAS Supported: 10 11 12 13 14 15 16
时序/时钟速度

5-5-5-15 / 800 MHz 14-14-14, 15-15-15, 16-16-16 / 2133 MHz
排名PassMark (越多越好)

693 3429

RAM Latency Calculator

Calculate Ram speed clock interval in nanosecond format

RAM 1

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

RAM 2

CAS Latency (CL) *

Frequency (Mhz) *

Absolute Latency

0 ns

最新比较

Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

G Skill Intl F4-3466C16-8GTZ 8GB

G Skill Intl F4-3466C16-8GTZ 8GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

Patriot Memory (PDP Systems) 1866 CL9 Series 4GB

SK Hynix HMA451U7MFR8N-TF 4GB

SK Hynix HMA451U7MFR8N-TF 4GB

Samsung M471B5173DB0-YK0 4GB

Samsung M471B5173DB0-YK0 4GB

G Skill Intl F4-2133C15-8GFX 8GB

G Skill Intl F4-2133C15-8GFX 8GB

Samsung M378B5673EH1-CF8 2GB

Samsung M378B5673EH1-CF8 2GB

Corsair CMW8GX4M1Z3600C18 8GB

Corsair CMW8GX4M1Z3600C18 8GB

Corsair CMX4GX3M2A1600C9 2GB

Corsair CMX4GX3M2A1600C9 2GB

G Skill Intl F4-3466C16-8GTZSK 8GB

G Skill Intl F4-3466C16-8GTZSK 8GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Unifosa Corporation GU332G0ALEPR8H2C6F 2GB

Team Group Inc. 16GB

Team Group Inc. 16GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Nanya Technology NT4GC64B8HG0NS-CG 4GB

Crucial Technology BLS8G4D240FSB.16FBD? 8GB

Crucial Technology BLS8G4D240FSB.16FBD? 8GB

Kingston 9905471-002.A00LF 2GB

Kingston 9905471-002.A00LF 2GB

Micron Technology 9ASF51272PZ-2G1B1 4GB

Micron Technology 9ASF51272PZ-2G1B1 4GB

G Skill Intl F2-5300CL4-1GBSA 1GB

G Skill Intl F2-5300CL4-1GBSA 1GB

Crucial Technology BLT8G4D32AET4K.M8FE1 8GB

Crucial Technology BLT8G4D32AET4K.M8FE1 8GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

STEC (Silicon Tech) S1024R3NN2QK-I 1GB

Crucial Technology BL8G32C16U4WL.M8FE 8GB

Crucial Technology BL8G32C16U4WL.M8FE 8GB

Samsung M391B5673EH1-CH9 2GB

Samsung M391B5673EH1-CH9 2GB

G Skill Intl F4-2133C15-16GIS 16GB

G Skill Intl F4-2133C15-16GIS 16GB

SK Hynix HYMP512U64CP8-Y5 1GB

SK Hynix HYMP512U64CP8-Y5 1GB

Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

Shenzhen Micro Innovation Industry PSD41626D19P1 16GB

Samsung M3 78T2863EHS-CF7 1GB

Samsung M3 78T2863EHS-CF7 1GB

Samsung M471A1G43EB1-CPB 8GB

Samsung M471A1G43EB1-CPB 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

Patriot Memory (PDP Systems) PSD38G1600L2S 8GB

G Skill Intl F4-2800C17-8GIS 8GB

G Skill Intl F4-2800C17-8GIS 8GB