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Samsung M378T5663QZ3-CF7 2GB
Kingston 9965589-026.D00G 8GB

Samsung M378T5663QZ3-CF7 2GB vs Kingston 9965589-026.D00G 8GB

总分
star star star star star
Samsung M378T5663QZ3-CF7 2GB

Samsung M378T5663QZ3-CF7 2GB

总分
star star star star star
Kingston 9965589-026.D00G 8GB

Kingston 9965589-026.D00G 8GB

差异 规格 评论

差异

Samsung M378T5663QZ3-CF7 2GB 需要考虑的原因
Samsung M378T5663QZ3-CF7 2GB
报告一个错误
Kingston 9965589-026.D00G 8GB 需要考虑的原因
Kingston 9965589-026.D00G 8GB
报告一个错误
  • 低于PassMark测试中的延时，ns
    35 left arrow 56
    左右 -60% 更低的延时
  • 更快的读取速度，GB/s
    9.4 left arrow 4
    测试中的平均数值
  • 更快的写入速度，GB/s
    6.9 left arrow 1,813.5
    测试中的平均数值
  • 更高的内存带宽，mbps
    19200 left arrow 6400
    左右 3 更高的带宽

规格

完整的技术规格清单
Samsung M378T5663QZ3-CF7 2GB
Kingston 9965589-026.D00G 8GB
主要特点
  • 存储器类型
    DDR2 left arrow DDR4
  • PassMark中的延时，ns
    56 left arrow 35
  • 读取速度，GB/s
    4,387.7 left arrow 9.4
  • 写入速度，GB/s
    1,813.5 left arrow 6.9
  • 内存带宽，mbps
    6400 left arrow 19200
Other
  • 描述
    PC2-6400, SSTL 1.8V, CAS Supported: 4 5 6 left arrow PC4-19200, 1.2V, CAS Supported: 10 11 12 13 14 15 16 17 18
  • 时序/时钟速度
    5-5-5-15 / 800 MHz left arrow 15-15-15, 16-16-16, 17-17-17, 18-18-18 / 2400 MHz
  • 排名PassMark (越多越好)
    693 left arrow 2116

Samsung M378T5663QZ3-CF7 2GB RAM的比较

Kingston 2GB-DDR2 800Mhz 2GB
TwinMOS 8D7T5MK8-TATP 2GB

Kingston 9965589-026.D00G 8GB RAM的比较

Crucial Technology BLS4G4D240FSE.8FBD 4GB
Hoodisk Electronics Co Ltd GKE160SO102408-2666 16GB
RAM Latency Calculator
Calculate Ram speed clock interval in nanosecond format
RAM 1
RAM 2

最新比较

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SanMax Technologies Inc. SMD4-U16G48MJ-32AA 16GB
内存RAM
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Crucial Technology CB8GS2400.C8ET 8GB
内存RAM
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Kingston 99U5474-037.A00LF 4GB
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G Skill Intl F4-3600C18-16GTRG 16GB
内存RAM
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G Skill Intl F4-3000C15-8GRRB 8GB
内存RAM
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A-DATA Technology AD73I1B1672EG 2GB
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Kingston HP32D4S2S1ME-8 8GB
内存RAM
SK Hynix HMT31GR7CFR4C-PB 8GB
SK Hynix HMT31GR7CFR4C-PB 8GB
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Samsung M393A5143DB0-CRC 4GB
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